Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation

dc.contributor.author	Burbelo, R.
dc.contributor.author	Isaiev, M.
dc.contributor.author	Kuzmich, A.
dc.date.accessioned	2017-05-31T19:09:33Z
dc.date.available	2017-05-31T19:09:33Z
dc.date.issued	2009
dc.identifier.citation	Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation / R. Burbelo, M. Isaiev, A. Kuzmich // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 403-405. — Бібліогр.: 4 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.80.Ba, 78.20.Nv
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118844
dc.description.abstract	The analysis of photothermal conversion in materials with modified properties of surface layer was made in this work. Influence of both physical and geometrical nonlinearities on the process of heat distribution was estimated.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Photothermal analysis of heterogeneous semiconductor structures under a pulse laser irradiation	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA