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dc.contributor.author |
Abbasov, Sh.M. |
|
dc.contributor.author |
Aghaverdiyeva, G.T. |
|
dc.contributor.author |
Ibrahimov, Z.A. |
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dc.contributor.author |
Farajova, U.F. |
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dc.contributor.author |
Ibrahimova, R.A. |
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dc.contributor.author |
Mehdevi, Heyder |
|
dc.date.accessioned |
2017-05-31T18:57:38Z |
|
dc.date.available |
2017-05-31T18:57:38Z |
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dc.date.issued |
2009 |
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dc.identifier.citation |
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure / Sh.M. Abbasov, G.T. Aghaverdiyeva, Z.A. Ibrahimov, U.F. Farajova, R.A. Ibrahimova, Heyder Mehdevi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2009. — Т. 12, № 4. — С. 357-361. — Бібліогр.: 13 назв. — англ. |
uk_UA |
dc.identifier.issn |
1560-8034 |
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dc.identifier.other |
PACS 42.25.Bs, 78.40.-q, 81.15.-z |
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dc.identifier.uri |
http://dspace.nbuv.gov.ua/handle/123456789/118836 |
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dc.description.abstract |
In this work, the growth properties of Ge₁₋xSix epitaxial films grown on Ge
substrates were investigated. The structural perfection of the films was controlled by
electron diffraction, electron microscopic and X-ray diffraction methods. It has been
established that the surface structure of the sample Ge/Ge₁₋xSix changes after irradiation by
accelerated electrons Ф = 5×1016 cm⁻², and generated are surface defects which play the
role of traps for change carriers. |
uk_UA |
dc.language.iso |
en |
uk_UA |
dc.publisher |
Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України |
uk_UA |
dc.relation.ispartof |
Semiconductor Physics Quantum Electronics & Optoelectronics |
|
dc.title |
Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge₁₋xSix heterostructure |
uk_UA |
dc.type |
Article |
uk_UA |
dc.status |
published earlier |
uk_UA |
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