De Haas–van Alphen effect in 2D systems: application to mono- and bilayer graphene

dc.contributor.author	Luk’yanchuk, I.A.
dc.date.accessioned	2017-05-30T11:02:14Z
dc.date.available	2017-05-30T11:02:14Z
dc.date.issued	2011
dc.identifier.citation	De Haas–van Alphen effect in 2D systems: application to mono- and bilayer graphene / I. A. Luk’yanchuk // Физика низких температур. — 2010. — Т. 37, № 1. — С. 56–59. — Бібліогр.: 26 назв. — англ.	uk_UA
dc.identifier.issn	0132-6414
dc.identifier.other	PACS: 71.20.–b, 71.18.+y, 81.05.U–
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118438
dc.description.abstract	Generalization of Shoenberg theory of de Haas–van Alphen magnetic oscillation in 2D metals for the case of electrons with arbitrary spectrum dispersion is used to propose the way to determine the nature of charge carriers in 2D conducting systems: mono- and bilayer graphene. We analyzed the analytical expression for the oscillating susceptibility as a function of chemical potential and distinguished its characteristic features for carriers with normal parabolic and Dirac-like linear spectra that can be detected experimentally.	uk_UA
dc.description.sponsorship	This work was made in frame of FP7-IRSES programs ROBOCON and TERACAN and was also supported by the French ANR Grant BLAN07-03-192276. Author thanks to A. Varlamov and A. Kavokin for the numerous discussions and suggestions.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Фізико-технічний інститут низьких температур ім. Б.І. Вєркіна НАН України	uk_UA
dc.relation.ispartof	Физика низких температур
dc.subject	Низкотемпературный магнетизм	uk_UA
dc.title	De Haas–van Alphen effect in 2D systems: application to mono- and bilayer graphene	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA