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Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy

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dc.contributor.author Rengevych, O.V.
dc.contributor.author Beketov, G.V.
dc.contributor.author Ushenin, Yu.V.
dc.date.accessioned 2017-05-30T10:22:21Z
dc.date.available 2017-05-30T10:22:21Z
dc.date.issued 2014
dc.identifier.citation Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy / O.V. Rengevych, G.V. Beketov, Yu.V. Ushenin // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 4. — С. 368-373. — Бібліогр.: 31 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS 73.20.Mf
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118417
dc.description.abstract The potential of surface plasmon resonance-enhanced total internal reflection microscopy for visualization of submicron particles has been demonstrated using submicron-sized silicon rods as a test object. Submicron Si-rods were deposited onto the surface of a plasmon-supporting gold film by sedimentation from suspension, and their images were obtained using optical microscope with SPR excitation. Quality of images obtained in this way was compared with images viewed from the prism side in the SPR microscopy configuration. Specific features of light scattering from filiform objects are discussed. The study was aimed at development of a novel type of SPR-based biosensor relied upon direct count of biological species of interest (bacteria, viruses, large biomolecular complexes). uk_UA
dc.description.sponsorship The authors would like to extend their most sincere appreciation to Dr. Prof. A. Klimovskaya for providing the submicron-sized silicon nanorods for this study. This work was partially supported by Swiss National Science Foundation through SCOPES JRP IZ73Z0_152661. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Visualization of submicron Si-rods by SPR-enhanced total internal reflection microscopy uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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