Optical properties and structure of As-Ge-Se thin films

dc.contributor.author	Tolmachov, I.D.
dc.contributor.author	Stronski, A.V.
dc.contributor.author	Vlcek, M.
dc.date.accessioned	2017-05-30T07:00:17Z
dc.date.available	2017-05-30T07:00:17Z
dc.date.issued	2010
dc.identifier.citation	Optical properties and structure of As-Ge-Se thin films / I.D. Tolmachov, A.V. Stronski, M. Vlcek // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С.276-279. — Бібліогр.: 14 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 42.70.Mp, 64.75.St, 78.66.-w
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118404
dc.description.abstract	Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk glasses and films were investigated by Raman spectroscopy. Both films are estimated to have high values of the nonlinear refractive index.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Optical properties and structure of As-Ge-Se thin films	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA