Relaxation process features of photoconductivity in p-i-n structures

dc.contributor.author	Mumimov, R.A.
dc.contributor.author	Kanyazov, Sh.K.
dc.contributor.author	Saymbetov, A.K.
dc.date.accessioned	2017-05-30T06:54:09Z
dc.date.available	2017-05-30T06:54:09Z
dc.date.issued	2010
dc.identifier.citation	Relaxation process features of photoconductivity in p-i-n structures / R.A. Mumimov, Sh.K. Kanyazov, A.K. Saymbetov // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 3. — С. 259-261. — Бібліогр.: 12 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 61.20.Lc, 74.62.Dh
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118398
dc.description.abstract	We studied the relaxation processes of photoconductivity in Si(Li) p-i-n structures. It has been shown that a clearly pronounced “well” is observed in time dependences of the photovoltage pulse after photoexcitation of these structures. Our experimental data are indicative of abnormal relaxation of photoconductivity in silicon pi-n diodes.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Relaxation process features of photoconductivity in p-i-n structures	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA