Investigation of the influence of isovalent impurity of silicon and y-irradiation (⁶⁰Co) on electrophysical parameters of n-Ge <Sb>

Abstract

The influence of isovalent impurity of Si on the kinetics of electron processes in n-Ge <Sb> single crystals has been investigated. It has been shown that in the region of predominant impurity scattering (at Т = 77.4 K), the presence of isovalent impurity significantly reduces the mobility of charge carriers and changes the sign of inequality ne₃₀₀k / ne₇₇.₄k > 1 characteristic of n-Ge <Sb> single crystals to the opposite one. It has found that in n-Ge <Sb> samples irradiated by y-rays (⁶⁰Co) with the dose 1.23*10⁸ R, the charge carrier mobility has low radiation stability and decreases with increasing the magnetic field, while remaining practically unchanged in the region of the intermediate Н values.