Properties of CdTe thin films prepared by hot wall epitaxy

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7
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Semicond. Physics Quantum Electronics & Optoelectronics, 2004, № 2
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dc.contributor.author	Bilevych, Ye.O.
dc.contributor.author	Boka, A.I.
dc.contributor.author	Darchuk, L.O.
dc.contributor.author	Gumenjuk-Sichevska, J.V.
dc.contributor.author	Sizov, F.F.
dc.contributor.author	Boelling, O.
dc.contributor.author	Sulkio-Cleff, B.
dc.date.accessioned	2017-05-28T19:00:33Z
dc.date.available	2017-05-28T19:00:33Z
dc.date.issued	2004
dc.identifier.citation	Properties of CdTe thin films prepared by hot wall epitaxy / Ye.O. Bilevych, A.I. Boka, L.O. Darchuk, J.V. Gumenjuk-Sichevska, F.F. Sizov, O. Boelling, B. Sulkio-Cleff // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2004. — Т. 7, № 2. — С. 129-132. — Бібліогр.: 15 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 68.55Ac; 81.15.-z; 73.61.Ga; 78.66.Hf
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118156
dc.description.abstract	CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin film fabrication provided the growth rate of about 0.03 mm/min. The current-voltage characteristics and transmission spectra were measured. X-ray diffrac-tion data (XRD) measurements were carried out as well.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Properties of CdTe thin films prepared by hot wall epitaxy	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA