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Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate

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dc.contributor.author Kaganovich, E.B.
dc.contributor.author Kizyak, I.M.
dc.contributor.author Kirillova, S.I.
dc.contributor.author Konakova, R.V.
dc.contributor.author Lytvyn, O.S.
dc.contributor.author Lytvyn, P.M.
dc.contributor.author Manoilov, E.G.
dc.contributor.author Primachenko, V.E.
dc.contributor.author Prokopenko, I.V.
dc.date.accessioned 2017-05-28T16:46:06Z
dc.date.available 2017-05-28T16:46:06Z
dc.date.issued 2003
dc.identifier.citation Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate / E.B. Kaganovich, I.M. Kizyak, S.I. Kirillova, R.V. Konakova, O.S. Lytvyn, P.M. Lytvyn, E.G. Manoilov, V.E. Primachenko, I.V. Prokopenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 471-478. — Бібліогр.: 12 назв. — англ. uk_UA
dc.identifier.issn 1560-8034
dc.identifier.other PACS: 73.63.Bd, 78.55.Ap, 78.67.Bf
dc.identifier.uri http://dspace.nbuv.gov.ua/handle/123456789/118090
dc.description.abstract We studied the effect of microwave electromagnetic radiation on silicon low-dimensional structures. The nanocrystalline silicon (nc-Si) films on p-Si substrate were formed with pulsed laser ablation. The surface morphology of films was studied with atomic force microscopy. We made X-ray phase analysis of films and measured strains in the structures obtained using X-ray diffractometry. We also investigated the time-resolved photoluminescence (PL) spectra and temperature dependence of photovoltage for the nc-Si/p-Si and nc- Si<Au>/p-Si structures, both before and after exposure to magnetron microwave radiation of moderate (1.5 W/cm²) irradiance. It was shown that after microwave irradiation photovoltage in the nc-Si films, as well as electron trap concentration in both the films and p-Si substrates, decrease. After irradiation of the nc-Si/p-Si structures the density of interfacial electron states (IES) decreases, while both PL intensity and relaxation time increase. At the same time irradiation of the nc-Si<Au>/p-Si structures that had high values of PL intensities and relaxation times before irradiation results in decrease of these values, as well as somewhat increases the density of IES. Higher (7.5 W/cm2) irradiance of microwave field impairs the PL properties (to the point of complete disappearance of PL). In addition it induces changes in film structure resulting, in the course of time, in decrease of strains in the structures studied. We discuss some mechanisms for microwave field effect on the properties of these structures. uk_UA
dc.language.iso en uk_UA
dc.publisher Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України uk_UA
dc.relation.ispartof Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title Effect of microwave electromagnetic radiation on the structure, photoluminescence and electronic properties of nanocrystalline silicon films on silicon substrate uk_UA
dc.type Article uk_UA
dc.status published earlier uk_UA


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