Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions

dc.contributor.author	Kovalyuk, Z.D.
dc.contributor.author	Makhniy, V.P.
dc.contributor.author	Yanchuk, O.I.
dc.date.accessioned	2017-05-28T16:33:33Z
dc.date.available	2017-05-28T16:33:33Z
dc.date.issued	2003
dc.identifier.citation	Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions / Z.D. Kovalyuk, V.P. Makhniy, O.I. Yanchuk // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 4. — С. 458-460. — Бібліогр.: 6 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 73.40.-c
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/118074
dc.description.abstract	Voltage-current characteristics forwardly biased heterojunctions p-GaSe-n-InSe made by the method of optical contact are analyzed. Asit was ascertained, the forward current is determined by tunnel-recombination processes at low voltages and overbarrier emission. The experimental characteristics are defined by the known theoretical expressions for anisotipical heterojunctions with the energy diagram by Andersen.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Mechanisms of forward current transport in p-GaSe-n-InSe heterojunctions	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA