Determination of surface parameters of solids by methods of X-ray total external reflection

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2003, том 6
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Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 1
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dc.contributor.author	Balovsyak, S.V.
dc.contributor.author	Fodchuk, I.M.
dc.contributor.author	Lytvyn, P.M.
dc.date.accessioned	2017-05-27T16:46:49Z
dc.date.available	2017-05-27T16:46:49Z
dc.date.issued	2003
dc.identifier.citation	Determination of surface parameters of solids by methods of X-ray total external reflection / S.V. Balovsyak, I.M. Fodchuk, P.M. Lytvyn // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2003. — Т. 6, № 1. — С. 41-46. — Бібліогр.: 9 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS: 61.10.Kw, 61.43.Hv, 68.35.-p
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117940
dc.description.abstract	The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The direct and inverse problem was solved, taking into consideration data obtained by the method of atomic-force microscopy: the theoretical curves of total external reflection are calculated and parameters describing a surface relief of the samples are restored.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	Determination of surface parameters of solids by methods of X-ray total external reflection	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA