On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2014, том 17
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Semicond. Physics Quantum Electronics & Optoelectronics, 2014, № 1
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dc.contributor.author	Sachenko, A.V.
dc.contributor.author	Belyaev, A.E.
dc.contributor.author	Boltovets, N.S.
dc.contributor.author	Vinogradov, A.O.
dc.contributor.author	Pilipenko, V.A.
dc.contributor.author	Petlitskaya, T.V.
dc.contributor.author	Anischik, V.M.
dc.contributor.author	Konakova, R.V.
dc.contributor.author	Korostinskaya, T.V.
dc.contributor.author	Kostylyov, V.P.
dc.contributor.author	Kudryk, Ya.Ya.
dc.contributor.author	Lyapin, V.G.
dc.contributor.author	Romanets, P.N.
dc.contributor.author	Sheremet, V.N.
dc.date.accessioned	2017-05-26T17:38:55Z
dc.date.available	2017-05-26T17:38:55Z
dc.date.issued	2014
dc.identifier.citation	On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step / A.V. Sachenko, A.E. Belyaev, N.S. Boltovets, A.O. Vinogradov, V.A. Pilipenko, T.V. Petlitskaya, V.M. Anischik, R.V. Konakova, T.V. Korostinskaya, V.P. Kostylyov, Ya.Ya. Kudryk, V.G. Lyapin, P.N. Romanets, V.N. Sheremet // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2014. — Т. 17, № 1. — С. 1-6. — Бібліогр.: 15 назв. — англ.	uk_UA
dc.identifier.issn	1560-8034
dc.identifier.other	PACS 73.40.Ns, 73.40.Cg, 85.40.-e
dc.identifier.uri	http://dspace.nbuv.gov.ua/handle/123456789/117786
dc.description.abstract	We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n⁺ -n-structures whose n⁺ -layer was formed using phosphorus diffusion or ion implantation. The ρс(Т) dependence was measured in the 125–375 K temperature range with the transmission line method, with allowance made for conduction in both the n⁺ -layer and n⁺ -n doping step.	uk_UA
dc.description.sponsorship	The work was supported by the Project №Ф54/209- 2013 ДФФД–БРФФД–2013.	uk_UA
dc.language.iso	en	uk_UA
dc.publisher	Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України	uk_UA
dc.relation.ispartof	Semiconductor Physics Quantum Electronics & Optoelectronics
dc.title	On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n⁺ -n doping step	uk_UA
dc.type	Article	uk_UA
dc.status	published earlier	uk_UA