Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2
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- Фізико-технічні та математичні науки
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- Відділення фізики і астрономії
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- Semiconductor Physics Quantum Electronics & Optoelectronics
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- Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13
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- Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1
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| dc.contributor.author | Bunak, S.V. | |
| dc.contributor.author | Buyanin, A.A. | |
| dc.contributor.author | Ilchenko, V.V. | |
| dc.contributor.author | Marin, V.V. | |
| dc.contributor.author | Melnik, V.P. | |
| dc.contributor.author | Khacevich, I.M. | |
| dc.contributor.author | Tretyak, O.V. | |
| dc.contributor.author | Shkavro, A.G. | |
| dc.date.accessioned | 2017-05-26T12:09:53Z | |
| dc.date.available | 2017-05-26T12:09:53Z | |
| dc.date.issued | 2010 | |
| dc.identifier.citation | Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 / S.V. Bunak, A.A. Buyanin, V.V. Ilchenko, V.V. Marin, V.P. Melnik, I.M. Khacevich, O.V. Tretyak, A.G. Shkavro // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2010. — Т. 13, № 1. — С. 12-18. — Бібліогр.: 19 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 73.61.Cw, Ng | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117699 | |
| dc.description.abstract | The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth conditions on frequency dependences of C - V characteristics, static and dynamic conductance of investigated structures has been clearly observed. As a result of theoretical modeling, C - V dependences have been calculated. The experimentally obtained negative constituent of differential capacitance has been qualitatively described. It has been experimentally found that the SiO₂/Si-ncs/SiO₂/Si structures with the tunnel dielectric layer revealed the effect of memorizing. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
