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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2010, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Acoustic emission and fluctuations of electroluminescence intensity in light-emitting heterostructures 
    Veleschuk, V.P.; Lyashenko, O.V.; Vlasenko, Z.K.; Kysselyuk, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It was shown that in the GaAsP/GaP and InGaN/GaN heterostructures during current passage redistribution of electroluminescence intensity on the structure surface takes place simultaneously with radiation of acoustic ...
  • Changes in the state of paramagnetic centers and lattice parameter of micro-structured Si under the influence of weak magnetic field 
    Trachevsky, V.V.; Steblenko, L.P.; Demchenko, P.Y.; Koplak, O.V.; Kuryliuk, A.M.; Melnik, A.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this work, the influence of weak magnetic field on structure-dependent properties of micro-structured Si was determined. The researches of EPR-spectra inherent to micro-structured Si showed the presence of the spectral ...
  • Compact laser probe for surface acoustic waves 
    Semenov, V.V.; Blonskyi, I.V.; Gryts, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Our compact laser probe for surface acoustic waves (SAW) is designed to study properties of SAW substrates and control technological processes of their manufacturing. These substrates are widely used in device manufacturing, ...
  • Determination of surface defects by using the wavefront scanner 
    Goloborodko, N.S.; Grygoruk, V.I.; Kurashov, V.N.; Podanchuk, D.V.; Goloborodko, A.A.; Kotov, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The possibility of changes in the polarization state of the laser beam reflected from inhomogeneity with the refractive index gradient is theoretically shown, which allows separating the phase shifts related with relief ...
  • Electrical properties of semiconductor structures with Si nanoclusters in SiO₂ grown by high temperature annealing technology of SiOx layer, X<2 
    Bunak, S.V.; Buyanin, A.A.; Ilchenko, V.V.; Marin, V.V.; Melnik, V.P.; Khacevich, I.M.; Tretyak, O.V.; Shkavro, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The theoretical and experimental investigations of electrical properties of the SiO₂/Si-ncs/SiO₂/Si structures grown by high temperature annealing SiOx, X<2, have been carried out. The influence of Si cluster growth ...
  • Electron-hole Fermi liquid in nanosized semiconductor structures 
    Litovchenko, V.G.; Grygoriev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The experimental and theoretical results on the quantum-sized electron-hole liquid plasma (EHLP) in semiconductors and analysis of the difference of it in comparison to the bulk one have been presented. The non-equilibrium ...
  • Formation of blisters in thin metal films on lithium niobate implanted by keV Ar⁺ ions 
    Lysiuk, V.O.; Moskalenko, N.L.; Staschuk, V.S.; Kluy, M.I.; Vakulenko, O.V.; Androsyuk, I.G.; Surmach, M.A.; Pogoda, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Bubble-like and crater-like blisters were observed at the boundaries of the structures “thin Ni film–lithium niobate” and “thin Pd film–lithium tantalate” implanted by Ar⁺ ions. Analyses of these systems by AFM and SEM ...
  • Genesis of initial defects in the process of monocrystalline silicon oxidation with subsequent scribing 
    Smyntyna, V.A.; Sviridova, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The type, density, and distribution of defects in initial and oxidated monocrystalline silicon wafers were studied by modern methods. It was established that disordered silicon and stacking faults are basic defects in ...
  • Influence of Cr doping on optical and photoluminescent properties of CdTe 
    Ilashchuk, М.I.; Parfenyuk, O.A.; Ulyanytskiy, K.S.; Brus, V.V.; Vakhnyak, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Spectra of transmission and low-temperature photoluminescence of CdTe:Cr crystals have been investigated for concentrations of the doping impurity (Cr) from 1∙10¹⁷ to 4∙10¹⁹ cm⁻³ in the melt. We have found additional ...
  • Intrinsic defects in nonstoichiometric B-SiC nanoparticles studied by pulsed magnetic resonance methods 
    Savchenko, D.V.; Pöppl, A.; Kalabukhova, E.N.; Venger, E.F.; Gadzira, M.P.; Gnesin, G.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Nonstoichiometric B-SiC nanoparticles (np-SiC) have been studied by electron paramagnetic resonance (EPR) and pulsed magnetic resonance methods including field swept electron spin echo (FS ESE), pulsed electron nuclear ...
  • ITO layers modified in glow discharge plasma for Nematic Liquid Crystal alignment 
    Kolomzarov, Yu.; Oleksenko, P.; Rybalochka, A.; Sorokin, V.; Tytarenko, P.; Zelinskyy, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Influence of ionic and plasma treatment on orienting properties of indium-tinoxide (ITO) films was investigated. The stable tilt angle generation of nematic liquid crystal (NLC) molecules was attended. Dependences of NLC ...
  • Li-Bi-Se semiconductor thin films: technology, structure and electrophysical properties 
    Bilozertseva, V.I.; Khlyap, H.M.; Shkumbatyuk, P.S.; Dyakonenko, N.L.; Mamaluy, A.O.; Gaman, D.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The results of structural investigations and electric field-induced properties of thin (40–100 nm) Li-Bi-Se films grown on glass substrates by means of the resistive evaporation technique are reported. The experimental ...
  • Optical transmittance of carbon suspensions in polymer matrixes under powerful pulsed laser irradiation 
    Zelensky, S.E.; Kopyshinsky, O.V.; Garashchenko, V.V.; Kolesnik, A.S.; Stadnytskyi, V.M.; Zelenska, K.S.; Shynkarenko, Ye .V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of optical limiting is investigated in the suspensions of carbon microparticles in aqueous gelatin gel and epoxy resin. Both transient and permanent changes of optical transmittance are observed after the ...
  • Photoluminescent properties of crystalline solid solution Zn₁₋ xMgxSe:Cr²⁺, a new active material for tunable IR lasers 
    Kovalenko, N.O.; Zagoruiko, Yu.A.; Fedorenko, O.O.; Kuzminov, E.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Considered in this work are the luminescent properties of new active material Zn₁₋xMgxSe :Cr²⁺ for tunable IR lasers. Measured in Zn₀.₇₅Mg₀.₂₅Se : Cr²⁺ is the spectrum of IR luminescence excitation, and shown is the ...
  • Radiative recombination in initial and electron-irradiated GaP crystals 
    Hontaruk, O.; Konoreva, O.; Litovchenko, P.; Manzhara, V.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg and N. Emission spectra were analyzed as dependent on the ...
  • Silicon carbide defects and luminescence centers in current heated 6H-SiC 
    Lee, S.W.; Vlaskina, S.I.; Vlaskin, V.I.; Zaharchenko, I.V.; Gubanov, V.A.; Mishinova, G.N.; Svechnikov, G.S.; Rodionov, V.E.; Podlasov, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep ...
  • Spin-dependent current in silicon p-n junction diodes 
    Tretyak, O.V.; Kozonushchenko, O.I.; Krivokhizha, K.V.; Revenko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface ...
  • The features of temperature dependence of contact resistivity of Au-Ti-Pd₂Si-p⁺ ₋Si ohmic contacts 
    Belyaev, A.E.; Boltovets, N.S.; Kapitanchuk, L.M.; Konakova, R.V.; Kladko, V.P.; Kudryk, Ya.Ya.; Kuchuk, A.V.; Lytvyn, O.S.; Milenin, V.V.; Korostinskaya, T.V.; Ataubaeva, A.B.; Nevolin, P.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We consider the features of formation of Au-Ti-Pd ohmic contacts to p⁺₋Si. Metallization was made by vacuum thermal sputtering of Pd, Ti and Au films onto the Si substrate heated up to 330 °С. It is shown that the contact ...
  • Two-dimensional digital demodulation for optical microscopes with spatial modulation of illumination 
    Borovytsky, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    It is proposed the new technique for the digital demodulation of images with two-dimensional spatial modulation of illumination. This technique is applicable for low contrast modulation with any phases of modulation that ...
  • Ultrasonic assisted nanomanipulations with atomic force microscope 
    Lytvyn, P.M.; Olikh, O.Ya.; Lytvyn, O.S.; Dyachyns’ka, O.M.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Demonstrated experimentally in this work was the possibility of controlled handling the nanoparticles with the size from 50 up to 250 nm on a semiconductor surface by using an atomic force microscope under conditions ...

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