Наукова електронна бібліотека
періодичних видань НАН України
періодичних видань НАН України
The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system
Репозиторій DSpace/Manakin
- Домашня сторінка
- →
- Фізико-технічні та математичні науки
- →
- Відділення фізики і астрономії
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics
- →
- Semiconductor Physics Quantum Electronics & Optoelectronics, 2013, том 16
- →
- Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2
- →
- Переглянути статтю
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | Rubish, V.M. | |
| dc.contributor.author | Bih, L. | |
| dc.contributor.author | Mykaylo, O.A. | |
| dc.contributor.author | Gorina, O.V. | |
| dc.contributor.author | Maryan, V.M. | |
| dc.contributor.author | Gasinets, S.M. | |
| dc.contributor.author | Solomon, A.M. | |
| dc.contributor.author | Lazor, P. | |
| dc.contributor.author | Kostyukevych, S.O. | |
| dc.date.accessioned | 2017-05-26T09:06:03Z | |
| dc.date.available | 2017-05-26T09:06:03Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system / V.M. Rubish, L. Bih, O.A. Mykaylo, O.V. Gorina, V.M. Maryan, S.M. Gasinets, A.M. Solomon, P. Lazor, S.O. Kostyukevych // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2013. — Т. 16, № 2. — С. 123-127. — Бібліогр.: 27 назв. — англ. | uk_UA |
| dc.identifier.issn | 1560-8034 | |
| dc.identifier.other | PACS 61.43.Fs, 61.46.Bc, 78.30.Ly | |
| dc.identifier.uri | http://dspace.nbuv.gov.ua/handle/123456789/117678 | |
| dc.description.abstract | (As₂S₃)₁₀₀₋x(SbSI)x (x = 80 and 90) glasses were prepared by cooling homogenized melts from 720…750 K in cold water. Their structure and structural changes under heat treatment of glasses are confirmed by studies of micro-Raman scattering and X-ray diffraction. In the matrix of these glasses, we observed SbSI nanocrystalline inclusions. It has been shown that the sizes of crystalline inclusions are dependent on the heat treatment regimes. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Інститут фізики напівпровідників імені В.Є. Лашкарьова НАН України | uk_UA |
| dc.relation.ispartof | Semiconductor Physics Quantum Electronics & Optoelectronics | |
| dc.title | The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system | uk_UA |
| dc.type | Article | uk_UA |
| dc.status | published earlier | uk_UA |
