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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 2 за датою випуску

Сортувати за: Порядок: Результатів:

  • Role of dislocations in formation of ohmic contacts to heavily doped n-Si 
    Belyaev, A.E.; Pilipenko, V.A.; Anischik, V.M.; Petlitskaya, T.V.; Klad’ko, V.P.; Konakova, R.V.; Boltovets, N.S.; Korostinskaya, T.V.; Kapitanchuk, L.M.; Kudryk, Ya.Ya.; Vinogradov, A.O.; Sheremet, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We present experimental results concerning a high density of structural defects (in particular, dislocations) in the near-contact region of heavily doped n-silicon. They appear in the course of firing Au Pd Ti Pd -Si n ...
  • ZnO as a conductive layer prepared by ALD for solar cells based on n-CdS/n-CdTe/p-Cu₁.₈S heterostructure 
    Semikina, T.V.; Mamykin, S.V.; Godlewski, M.; Luka, G.; Pietruszka, R.; Kopalko, K.; Krajewski, T.A.; Gierałtowska, S.; Wachnicki, L.; Shmyryeva, L.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    ZnO films with high conductivity are obtained by atomic layer deposition for application in solar cells based on n CdS/ n CdTe / p Cu₁.₈S heterostructure. The parameters of solar cells with ZnO electrode are calculated ...
  • Effect of optical losses irregularity on wideband fiber Raman amplification for total telecom window in silica fibers 
    Felinskyi, G.S.; Dyriv, M.Y.; Korotkov, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Raman threshold pump power and optical amplification band calculations adjusted for attenuation dispersion in the range of total S+C+L telecom window of silica fibers (roughly from 1.46 to 1.62 μm) are presented. It ...
  • The influence of obtaining and heat treatment conditions on the structure of As₂S₃-SbSI system 
    Rubish, V.M.; Bih, L.; Mykaylo, O.A.; Gorina, O.V.; Maryan, V.M.; Gasinets, S.M.; Solomon, A.M.; Lazor, P.; Kostyukevych, S.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    (As₂S₃)₁₀₀₋x(SbSI)x (x = 80 and 90) glasses were prepared by cooling homogenized melts from 720…750 K in cold water. Their structure and structural changes under heat treatment of glasses are confirmed by studies of ...
  • Simulating the diffraction grating reflectivity using effective medium theory 
    Goloborodko, A.A.; Goloborodko, N.S.; Oberemok, Ye.A.; Savenkov, S.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The features of optical radiation interaction with surface of gratings are investigated. The diffraction grating is proposed to be used in the effective medium model to test nanostructured surfaces. This object allows ...
  • Optical and electronic properties of Cu-Mn solid solutions 
    Bondar, V.M.; Stashchuk, V.S.; Polianska, O.P.; Chernukha, Ie.O.; Tsuk, B.A.; Lysiuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The optical properties of Cu-Mn alloys with Mn concentrations of 2, 5, 10 and 17.5% (which corresponds to the γ-solid solutions) were studied within a wide spectral range of 0.23 to 2.8 μm (0.44…5.39 eV). Real and ...
  • Silicon carbide phase transition in as-grown 3C-6H polytypes junction 
    Vlaskina, S.I.; Mishinova, G.N.; Vlaskin, V.I.; Svechnikov, G.S.; Rodionov, V.E.; Lee, S.W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Perfect pure (concentration of donors ~ 10¹⁶cm⁻³ ) single crystals with joint polytypes (hexagonal-cubic) or heterojunction investigated using low temperature (4.2 K and 77 K) photoluminescence. Phase transformation ...
  • Modified correlation equation in the FSDP-related void-based model for As₂S(Se)₃ chalcogenide glasses 
    Kavetskyy, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Revised in this work is the correlation equation Q₁ = 2.3×π/D in the FSDPrelated void-based model for As₂S(Se)₃ chalcogenide glasses between the first sharp diffraction peak (FSDP) position, Q₁, and nanovoid diameter, ...
  • Optimization of conditions for treatment of ZnSe crystal surfaces by chemical etching 
    Tomashyk, V.M.; Kravtsova, A.S.; Tomashyk, Z.F.; Stratiychuk, I.B.; Galkin, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The process of chemical polishing the undoped and doped ZnSe crystals surface with H₂O₂ – HBr etchants has been studied. The dependence of the samples polishing rate on the concentration of H₂O₂ in HBr solution has been ...
  • Temperature changes of the exciton transition energy in lead di-iodide nanofilms 
    Pugantseva, O.V.; Kramar, V.M.; Fesiv, I.V.; Kudryavtsev, O.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Adduced in this work are the results of theoretical investigations devoted to the influence of spatial confinement effects, self-polarization of heterojunction planes and exciton-phonon interaction on values of the exciton ...
  • Periodic structures with spherical alumina particles: Transmission and reflection spectra 
    Miskevich, A.A.; Loiko, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Coherent transmission and reflection coefficients of individual monolayers of spherical alumina particles in the wavelength range from 0.3 to 1.0 μm and multilayers consisting of a set of such monolayers are computed. ...
  • Influence of cation substitution on phase transition and optical absorption edge in Cu₆(P₁₋xAsx)S₅I mixed crystals 
    Studenyak, I.P.; Kranjčec, M.; Kayla, M.I.; Izai, V.Yu.; Orliukas, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Cu₆(P₁₋xAsx)S₅I mixed crystals were grown using chemical vapour transport. Temperature isoabsorption investigations of optical absorption edge enable to reveal anomalies typical for the first- and second-order phase ...
  • Electron mobility in the GaAs/InGaAs/GaAs quantum wells 
    Vainberg, V.V.; Pylypchuk, A.S.; Baidus, N.V.; Zvonkov, B.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The temperature dependence of the electron lateral mobility in quantum wells of the GaAs/InGaAs/GaAs heterostructures with delta-like doping has been studied. Two types of sample doping – in the quantum well and in the ...
  • Effect of neutron irradiation on non-equilibrium HfB₂-B₄C composites 
    Totsky, I.M.; Shynkarenko, V.V.; Popov, O.Yu.; Makara, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We studied the effect of neutron irradiation on composite material HfC-HfB₂- C made using rapid reactive hot pressing technology. The histograms of microhardness and results of X-ray phase analysis, obtained both before ...
  • Light passage through the polymer film of liquid crystal droplets with modified boundary conditions 
    Loiko, V.A.; Zyryanov, V.Ya.; Krakhalev, M.N.; Konkolovich, A.V.; Miskevich, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    A method to analyze coherent transmission coefficients and the small-angle light scattering structure of PDLC layer with homogeneous and inhomogeneous boundary conditions on the droplets surface is discussed. For PDLC ...
  • High-pole LED lighting system 
    Trofimov, Y.V.; Lishik, S.I.; Dolgushin, V.V.; Kernazhytski, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    Different kinds of design of the 25-meter high-pole LED lighting system with 16 or 9 LED Street Lights “Phoenix” mounted on its crown (corona) have been suggested. The crown consists of two tiers. Some luminaries (8 ...
  • White LED modules encapsulation features 
    Trofimov, Yu.V.; Posedko, V.S.; Ostretsov, E.F.; Tsvirko, V.I.; Survilo, L.N.; Marus, N.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The behaviour and causes of changes for correlated color temperature (CCT) and radiant spectral power in white LED modules of different design at their encapsulation by optical compounds are investigated. It is shown ...
  • On application of heat-conductive plastics in LED technology 
    Trofimov, Yu.V.; Lishik, S.I.; Pershukevich, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    A comparative analysis of the characteristics of heat-conducting plastic was performed. The results of the thermal measurements of two of the same type 3W LED modules installed on heat sink with the same area of ...
  • Quasi-active thermal control in LED street lights 
    Trofimov, Yu.V.; Lishik, S.I.; Pershukevich, P.P.; Tsvirko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this paper, the hollow heat sink has been studied. The physical and mathematical model of a hollow heat sink and CFD modeling are proposed for fitting the experimental results. It has been shown that the model of a ...
  • Features of the development of LED spotlight for local illumination of extended objects 
    Kudrautsau, K.A.; Kernazhytski, Y.V.; Tsvirka, V.I.; Trofimov, Yu.V.; Posedko, V.S.; Posedko, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The peculiarities of extra narrow-angle LED spotlight development for accent lighting have been described. The optical layout of lighting fixture was developed. The mathematical model that can be used to calculate the ...

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