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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 1999, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • AES and XPS characterization of TiN layers formed and modified by ion implantation 
    Melnik, V.; Popov, V.; Kruger, D.; Oberemok, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Compositional characterization of sputtered and implanted titanium nitride (TiN) layers for microelectronics application is performed based on Auger Electron Spectroscopy (AES) and X-ray induced Photoelectron Spectroscopy ...
  • Conversion efficiency in silicon solar cells with spatially non-uniform doping 
    Sachenko, A.V.; Prima, N.A.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The conversion efficiency of diffusion-type silicon solar cells, η, is studied theoretically in assumption of different doping levels existing under collection grid contacts and within the inter-contact spacing. It is shown ...
  • Effect of emitter proprties on the conversion efficiency of silicon solar cells 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into ...
  • Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs 
    Venger, E.F.; Beliaev, A.A.; Boltovets, N.S.; Ermolovich, I.B.; Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Voitsikhovski, D.I.; Figielski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid ...
  • Generalized model of holographic recording in photopolymer materials 
    Karpov, H.M.; Obukhovsky, V.V.; Smirnova, T.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The generalized diffusion model of holographic recording in photopolymer materials has been offered. The theoretical description of hologram formation process is based on the concept of free volume redistribution and using ...
  • Influence of superlattice produced by coherent light beams on the optical properties of ferromagnetic semiconductors 
    Semchuk, O.Yu.; Gozhenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In this work we study influence of the periodical nanostructures superlattices, produced by coherent light beams on the optical phenomena in ferromagnetic semiconductors (FMSC). It is shown that as a result of the incident ...
  • Interfacial architecture on the fractal support: polycrystalline gold films as support for self-assembling monolayers 
    Snopoka, B.; Strizhak, P.; Kostyukevich, E.; Serebriy, V.; Lysenko, S.; Shepeliavii, P.; Priatkin, S.L.; Kostuykevich, S.; Shirshov, Yu.; Venger, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Multifractal analysis is performed for description of the surface topography of thin polycrystalline gold film. Its structure was modified by annealing at different temperatures in the range 20÷200 ⁰C and films were imaged ...
  • Mathematical model of photoacoustic microscopy with piezoelectric detection 
    Vertsanova, E.V.; Yakimenko, Yu.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Mathematical model is formulated for piezoelectric detection of the photoacoustics effect in optically semitransparent and thermally thick object with subsurface non-homogeneity in the case of free holding a piezodetector ...
  • Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes 
    Ivasiv, Z.F.; Sizov, F.F.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to ...
  • Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures 
    Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T. ; Mueller, U.; Walther, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Pseudomorphic strained-layer AlxGa₁₋xAs/InyGa₁₋yAs/GaAs heterostructures have been studied by means of photoluminescence and Raman scattering. It is established the correlation between the photoluminescence line shape ...
  • Optical properties of thin metal films 
    Kovalenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Optical constants of metallic thin films made from: Ag, Au, Hf, Ir, Mo, Nb, Os, Pd, Pt, Re, Rh, Ru, Ta, W, Zr were determined on the basis of measured index of refraction in region of wavelength λ = 241216 Å. Two types ...
  • Optoelectronic sensor of longitudinal and angular displacements 
    Dlugaszek, A.; Jabczynski, J.; Janucki, J.; Skrzeczanowski, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In the sensor a triangulation method of displacement measurement has been used. A method of sensor calibration using interferometric distance measurements has been elaborated. Linearity and resolution investigations have ...
  • Properties of SiGe/Si heterostructures fabricated by ion implantation technique 
    Gomeniuk, Y.V.; Lysenko, V.S.; Osiyuk, I.N.; Tyagulski, I.P.; Valakh, M.Ya.; Yukhimchuk, V.A.; Willander, M.; Patel, C.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A comprehensive electrical characterisation of the SiGe/Si heterostructures has been performed in the wide temperature range (10270 K). Four structures fabricated by the Ge⁺ ion implantation technique at different substrate ...
  • Resonance generation of sum harmonic in static electric field 
    Venger, E.F.; Griban, V.M.; Melnichuk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Using the group theory considerations, we investigate the nonlinear effect tensor (NET) for a crystal in a static electric field when a harmonic or the initial emission frequency approaches that of the excitonic absorption ...
  • Review of a monographs 
    Glinchuk, K.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In their monograph the authors have systematized and generalized the results of numerous theoretical, as well as experimental, investigations of interactions between phases at the metal−InP (GaAs) interfaces and degradation ...
  • Selective polarization of ferroelectrics in functional electronics 
    Lepikh, Ya.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The selective polarization technique of ferroelectrics representing sound-conductors and piezoelectric transformers in different devices of functional electronics is described. The feature of the technique is the ability ...
  • Size dependence of magnetic characteristics measured on separate nickel particles 
    Nepijko, S.A.; Wiesendanger, R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Interference electron microscopy was applied to measure the coercive force, the magnetic saturation and the residual magnetization of separated nickel particles. Nickel particles with perfect sphericity and radius from 10 ...
  • The exact solution of self-consistent equations in the scanning near-field optic microscopy problem 
    Lozovski, V.; Bozhevolnyi, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The macroscopic approach that allows one to obtain an exact solution of the self-consistent equation of the Lippmann-Schwinger type is developed. The main idea of our method consist in usage of diagram technique for exact ...
  • Thermoelectric property features of PbTe monocrystalline and polycrystalline films 
    Freik, D.M.; Zapukhlyak, R.I.; Lopjanka, M.A.; Mateik, G.D.; Mikhajlonka, R.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The equations of a regression were obtained by methods of mathematical planning of manyfactors experiments. These equations determine a dependence of thermoelectric parameters of PbTe thin films prepared by hot wall the ...

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