Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Сортувати за: Порядок: Результатів:

  • Generalized model of holographic recording in photopolymer materials 
    Karpov, H.M.; Obukhovsky, V.V.; Smirnova, T.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The generalized diffusion model of holographic recording in photopolymer materials has been offered. The theoretical description of hologram formation process is based on the concept of free volume redistribution and using ...
  • Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide 
    Venger, Ye.F.; Milenin, V.V.; Ermolovich, I.B.; Konakova, R.V.; Voitsikhovskiy, D.I.; Hotovy, I.; Ivanov, V. N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, ...
  • Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication 
    Stronski, A.V.; Vlcek, M.; Shepeliavyi, P.E.; Sklenar, A.; Kostyukevich, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was ...
  • Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals 
    Klad'ko, V. P.; Grigoriev, D.O.; Datsenko, L.I.; Machulin, V.F.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the ...
  • Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films 
    Mamikonova, V.M.; Kasimov, F.D.; Kemerchev, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The possibility of forming polycrystalline silicon films by pulse thermal annealing has been investigated using measurement of a photo-e.m.f., dark and light voltage-current characteristics. Investigated samples were ...
  • Influence of superlattice produced by coherent light beams on the optical properties of ferromagnetic semiconductors 
    Semchuk, O.Yu.; Gozhenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In this work we study influence of the periodical nanostructures superlattices, produced by coherent light beams on the optical phenomena in ferromagnetic semiconductors (FMSC). It is shown that as a result of the incident ...
  • Influence of temporal parameters of laser irradiation on emission spectra of the evaporated material 
    Zabello, E.; Syaber, V.; Khizhnyak, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The results of study of the emission spectra of metals excited by laser pulses bursts under atmospheric conditions are presented. It is demonstrated that the area responsible for the atom irradiation of evaporated substance ...
  • Interface electronic properties of eterojunctions based on nanocrystalline silicon 
    Kaganovich, E.B.; Kirillova, S.I.; Manoilov, E.G.; Primachenko, V.E.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples ...
  • Interfacial architecture on the fractal support: polycrystalline gold films as support for self-assembling monolayers 
    Snopoka, B.; Strizhak, P.; Kostyukevich, E.; Serebriy, V.; Lysenko, S.; Shepeliavii, P.; Priatkin, S.L.; Kostuykevich, S.; Shirshov, Yu.; Venger, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Multifractal analysis is performed for description of the surface topography of thin polycrystalline gold film. Its structure was modified by annealing at different temperatures in the range 20÷200 ⁰C and films were imaged ...
  • Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique 
    Volodin, N.M.; Zavyalova, L.V.; Kirillov, A.I.; Svechnikov, S.V.; Prokopenko, I.V.; Khanova, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The polycrystalline SmS films were fabricated by MOCVD technique using a number of ditiocarbamates, synthesized by different techniques. The growth kinetics and temperature dependencies of the film growth rate are investigated, ...
  • Investigation of structural perfection of SiC ingots grown by a sublimation method 
    Avramenko, S.F.; Kiselev, V.S.; Valakh, M.Ya.; Visotski, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. ...
  • Investigation of the photoelastic effect in si at high values of the absorptivity 
    Boiko, I.I.; Venger, Ye.F.; Nikitenko, E.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band ...
  • Investigation of the undersurface damaged layers in silicon wafers 
    Holiney, R.Yu.; Matveeva, L.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates ...
  • Iodine-stabilized He-Ne laser pumped by transverse rf-discharge 
    Boyko, O.V.; Negriyko, A.M.; Yatsenko, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The results of experimental investigations of He-Ne/¹²⁷I₂ lasers (l = 633 nm) pumped by transverse rf-discharge are presented. Due to the low level of amplitude fluctuations, the frequency stability of such lasers reaches ...
  • IR sensor readout devices with source input circuits 
    Sizov, F.F.; Reva, V.P.; Derkach, Yu.P.; Kononenko, Yu.G.; Golenkov, A.G.; Korinets, S.V.; Darchuk, S.D.; Filenko, D.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, ...
  • Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands 
    Grigorchuk, N. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton ...
  • Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures 
    Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T.; Mueller, U.; Walther, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. ...
  • Mathematical model of photoacoustic microscopy with piezoelectric detection 
    Vertsanova, E.V.; Yakimenko, Yu.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Mathematical model is formulated for piezoelectric detection of the photoacoustics effect in optically semitransparent and thermally thick object with subsurface non-homogeneity in the case of free holding a piezodetector ...
  • Micro-Raman study of CNx composites subjected to high pressure treatment 
    Klyui, N.I.; Valakh, M.Ya.; Visotski, V.G.; Pascual, J.; Mestres, N.; Novikov, N.V.; Petrusha, I.A.; Voronkin, M.A.; Zaika, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    CNx films were deposited by reactive ion-plasma sputtering of a graphite target in an argon-nitrogen-acetone vapor atmosphere onto molybdenum substrates. After deposition the CNx composites were cut from substrates, formed ...
  • Model of optical transitions in A₂B₆ wurtzite type quantum dots 
    Kunets, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис