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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Сортувати за: Порядок: Результатів:

  • Effect of annealing on activation of native acceptors in narrow-gap p-HgCdTe crystals 
    Bogoboyashchiy, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Hall effect, resistivity and p-n-junction characteristics were investigated on high pure and perfect p-type Hg₁₋xCdxTe crystals (x ~ 0.2) versus temperature, doping, and a way of heat treatment. It was shown, that activation ...
  • Effect of emitter proprties on the conversion efficiency of silicon solar cells 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The effect of donor concentration distribution N(x) in the n⁺-emitter on the conversion efficiency h of silicon n⁺-p-p⁺ solar cells is studied theoretically. Shockley-Reed-Hall recombination in the emitter is taken into ...
  • Effect of rapid thermal annealing on properties of contacts Au-Mo-TiBx-GaAs 
    Venger, E.F.; Beliaev, A.A.; Boltovets, N.S.; Ermolovich, I.B.; Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Voitsikhovski, D.I.; Figielski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The analytical, structural and electrophysical techniques have been applied to studies of the thermal degradation mechanism appearing in diode structures with the Schottky barrier Au-Mo-TiBxGaAs. It was shown that the rapid ...
  • Efficiency limit for diffusion silicon solar cells at concentrated illumination 
    Gorban, A.P.; Kostylyov, V.P.; Sachenko, A.V.; Serba, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A general approach has been developed to calculation of photoconversion efficiency of thinbase silicon solar cells with double-sided metallization for concentrated solar illumination. The full absorption of photoactive ...
  • Electron-enhanced reactions responsible for photoluminescence spectrum change in II-VI compounds 
    Korsunskaya, N. E.; Markevich, I. V.; Dzhumaev, B. R.; Borkovskaya, L. V.; Sheinkman, M. K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Electron-enhanced reactions in II-VI compounds are shown to be caused by the presence of some mobile defects which diffusion is not enhanced under excitation. At the same time, electron-enhanced diffusion can be imitated ...
  • Electro-physical properties of γ-exposed crystals of silicon and germanium 
    Dotsenko, Yu. P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The paper represents a review of research data upon changing electrophysical properties of n-Si and n-Ge when radiation defects arise under action of different γ-irradiation doses. Analyzed are consequences of arising deep ...
  • ENDOR study of irradiated tooth enamel 
    Ishchenko, S.; Vorona, I.; Okulov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    γ- and x-irradiated tooth enamel has been studied by EPR and ENDOR. Radiation-induced EPR spectrum of tooth enamel was found to be a superposition of signals with dominant contribution determined by CO₂- radicals. Two types ...
  • Evaluation of the efficiency of interband radiative recombination in high quality Si 
    Sachenko, A.V.; Kryuchenko, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    It is shown theoretically that quantum efficiency of interband radiation in highly purified silicon with low concentration of deep impurities and defects can exceed 10% at room temperatures in the case of negligibly small ...
  • Evidence for photochemical transformations in porous silicon 
    Shevchenko, V.B.; Makara, V.A.; Vakulenko, O.V.; Dacenko, O.I.; Rudenko, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The dynamics of the variation of photoluminescence intensity (PLI) of porous silicon (PS) samples subjected to laser irradiation (337 nm, 3.7 mW) during their ageing in air has been studied. The PLI turned out to increase ...
  • Generalized model of holographic recording in photopolymer materials 
    Karpov, H.M.; Obukhovsky, V.V.; Smirnova, T.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The generalized diffusion model of holographic recording in photopolymer materials has been offered. The theoretical description of hologram formation process is based on the concept of free volume redistribution and using ...
  • Heat tolerance of titanium boride and titanium nitride contacts to gallium arsenide 
    Venger, Ye.F.; Milenin, V.V.; Ermolovich, I.B.; Konakova, R.V.; Voitsikhovskiy, D.I.; Hotovy, I.; Ivanov, V. N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For contacts prepared from titanium borides by and nitrides ion-plasma sputtering onto gallium arsenide both formation mechanisms and thermal stability were investigated. We used a combination of structural, secondary-emission, ...
  • Image formation properties of As₄₀S₂₀Se₄₀ thin layers in application for gratings fabrication 
    Stronski, A.V.; Vlcek, M.; Shepeliavyi, P.E.; Sklenar, A.; Kostyukevich, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was ...
  • Influence of absorption level on mechanisms of Braggdiffracted x-ray beam formation in real silicon crystals 
    Klad'ko, V. P.; Grigoriev, D.O.; Datsenko, L.I.; Machulin, V.F.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The methods of numerical calculations based on the formulae of the X-ray dynamic scattering theory by real crystals and of the Takagi-Topin equations were used for investigation of the basic regularities of inherent to the ...
  • Influence of pulse thermal annealing on photoelectrical properties of locally grown polycrystalline silicon films 
    Mamikonova, V.M.; Kasimov, F.D.; Kemerchev, G.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The possibility of forming polycrystalline silicon films by pulse thermal annealing has been investigated using measurement of a photo-e.m.f., dark and light voltage-current characteristics. Investigated samples were ...
  • Influence of superlattice produced by coherent light beams on the optical properties of ferromagnetic semiconductors 
    Semchuk, O.Yu.; Gozhenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In this work we study influence of the periodical nanostructures superlattices, produced by coherent light beams on the optical phenomena in ferromagnetic semiconductors (FMSC). It is shown that as a result of the incident ...
  • Influence of temporal parameters of laser irradiation on emission spectra of the evaporated material 
    Zabello, E.; Syaber, V.; Khizhnyak, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The results of study of the emission spectra of metals excited by laser pulses bursts under atmospheric conditions are presented. It is demonstrated that the area responsible for the atom irradiation of evaporated substance ...
  • Interface electronic properties of eterojunctions based on nanocrystalline silicon 
    Kaganovich, E.B.; Kirillova, S.I.; Manoilov, E.G.; Primachenko, V.E.; Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    For investigations of electronic properties of heterojunctions nanocrystalline Si film (nc-Si)/ monocrystalline Si (c-Si) the technique of temperature dependencies of surface photovoltage was used. Two types of samples ...
  • Interfacial architecture on the fractal support: polycrystalline gold films as support for self-assembling monolayers 
    Snopoka, B.; Strizhak, P.; Kostyukevich, E.; Serebriy, V.; Lysenko, S.; Shepeliavii, P.; Priatkin, S.L.; Kostuykevich, S.; Shirshov, Yu.; Venger, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Multifractal analysis is performed for description of the surface topography of thin polycrystalline gold film. Its structure was modified by annealing at different temperatures in the range 20÷200 ⁰C and films were imaged ...
  • Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique 
    Volodin, N.M.; Zavyalova, L.V.; Kirillov, A.I.; Svechnikov, S.V.; Prokopenko, I.V.; Khanova, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The polycrystalline SmS films were fabricated by MOCVD technique using a number of ditiocarbamates, synthesized by different techniques. The growth kinetics and temperature dependencies of the film growth rate are investigated, ...
  • Investigation of structural perfection of SiC ingots grown by a sublimation method 
    Avramenko, S.F.; Kiselev, V.S.; Valakh, M.Ya.; Visotski, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. ...

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