Наукова електронна бібліотека
періодичних видань НАН України

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 1999, том 2 за назвою

Сортувати за: Порядок: Результатів:

  • Interfacial architecture on the fractal support: polycrystalline gold films as support for self-assembling monolayers 
    Snopoka, B.; Strizhak, P.; Kostyukevich, E.; Serebriy, V.; Lysenko, S.; Shepeliavii, P.; Priatkin, S.L.; Kostuykevich, S.; Shirshov, Yu.; Venger, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Multifractal analysis is performed for description of the surface topography of thin polycrystalline gold film. Its structure was modified by annealing at different temperatures in the range 20÷200 ⁰C and films were imaged ...
  • Investigation of growth conditions, crystal structure and surface morphology of SmS films fabricated by MOCVD technique 
    Volodin, N.M.; Zavyalova, L.V.; Kirillov, A.I.; Svechnikov, S.V.; Prokopenko, I.V.; Khanova, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The polycrystalline SmS films were fabricated by MOCVD technique using a number of ditiocarbamates, synthesized by different techniques. The growth kinetics and temperature dependencies of the film growth rate are investigated, ...
  • Investigation of structural perfection of SiC ingots grown by a sublimation method 
    Avramenko, S.F.; Kiselev, V.S.; Valakh, M.Ya.; Visotski, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Monocrystalline SiC ingots were grown by a modified Lely method using 6H-SiC seed crystals with (0001) base plane. The crystal growth was carried out in the temperature range 2200-2500 ⁰C at Ar pressure from 2 to 40 mbar. ...
  • Investigation of the photoelastic effect in si at high values of the absorptivity 
    Boiko, I.I.; Venger, Ye.F.; Nikitenko, E.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The birefrigence effect induced by uniaxial elastic deformation has been investigated in monocrystalline Si using theoretical and experimental technigues. To improve a measuring system sensitivity in the range of band ...
  • Investigation of the undersurface damaged layers in silicon wafers 
    Holiney, R.Yu.; Matveeva, L.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates ...
  • Iodine-stabilized He-Ne laser pumped by transverse rf-discharge 
    Boyko, O.V.; Negriyko, A.M.; Yatsenko, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The results of experimental investigations of He-Ne/¹²⁷I₂ lasers (l = 633 nm) pumped by transverse rf-discharge are presented. Due to the low level of amplitude fluctuations, the frequency stability of such lasers reaches ...
  • IR sensor readout devices with source input circuits 
    Sizov, F.F.; Reva, V.P.; Derkach, Yu.P.; Kononenko, Yu.G.; Golenkov, A.G.; Korinets, S.V.; Darchuk, S.D.; Filenko, D.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Silicon readout devices with input direct injection and buffered direct injection circuits and charge-coupled devices (CCD) multiplexers to be used with n⁺-p- or p⁺-n-photovoltaic (PV) multielement arrays were designed, ...
  • Light absorption by d-dimensional organic semiconductors under exciton transitions between broad bands 
    Grigorchuk, N. I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Within the framework of the dipole approximation the line-shape of light absorption for exciton transitions between broad bands in one-, two- and three-dimensional organic semiconductor structures are calculated. Exciton ...
  • Many-body effects in photoluminescence of heavily doped AlGaAs/InGaAs /GaAs heterostructures 
    Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T.; Mueller, U.; Walther, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A photoluminescence (PL) study of pseudomorphic modulation-doped AlxGa₁₋xAs/Iny Ga₁₋yAs/GaAs heterostructures possessing high electron density shows a fundamental change of the PL spectrum under excitation density increase. ...
  • Mathematical model of photoacoustic microscopy with piezoelectric detection 
    Vertsanova, E.V.; Yakimenko, Yu.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Mathematical model is formulated for piezoelectric detection of the photoacoustics effect in optically semitransparent and thermally thick object with subsurface non-homogeneity in the case of free holding a piezodetector ...
  • Micro-Raman study of CNx composites subjected to high pressure treatment 
    Klyui, N.I.; Valakh, M.Ya.; Visotski, V.G.; Pascual, J.; Mestres, N.; Novikov, N.V.; Petrusha, I.A.; Voronkin, M.A.; Zaika, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    CNx films were deposited by reactive ion-plasma sputtering of a graphite target in an argon-nitrogen-acetone vapor atmosphere onto molybdenum substrates. After deposition the CNx composites were cut from substrates, formed ...
  • Model of optical transitions in A₂B₆ wurtzite type quantum dots 
    Kunets, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Model of optical transitions in A₂B₆ wurtzite type quantum dots is proposed. It is based on the effective mass approximation and the quantum confinement effects, the valence band degeneracy in G point of the Brillouin zone ...
  • Noise spectra and dark current investigations in n⁺-p-type Hg₁₋xCdxTe (x ≈ 0.22) photodiodes 
    Ivasiv, Z.F.; Sizov, F.F.; Tetyorkin, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The dark current and noise spectra were investigated in Hg₁₋xCdxTe (x≅0.22) photodiodes at zero and low reverse bias voltages. The photodiodes were prepared by boron implantation into LPE films. The 1/f noise is proved to ...
  • On problem of the rigorous diffraction quantitative description 
    Anokhov, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    New data showing an inaccuracy of Kirchhoff's description for the diffraction of the limited aperture light beams are presented. A series of the known experimental facts, which did not have an unequivocal interpretation ...
  • On the collection of photocurrent in solar cells with a contact grid 
    Sachenko, A.V.; Gorban, A.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The exact solution for the dependence of specific power of photoconversion in the mode of maximum collected power on distance l between lines of the contact grid has been obtained. It is shown that in an optimized case, ...
  • Optical characterization of pseudomorphic AlGaAs/InGaAs/GaAs heterostructures 
    Zhuchenko, Z.Ya.; Tarasov, G.G.; Lavorik, S.R.; Mazur, Yu.I.; Valakh, M.Ya.; Kissel, H.; Masselink, W.T. ; Mueller, U.; Walther, C. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Pseudomorphic strained-layer AlxGa₁₋xAs/InyGa₁₋yAs/GaAs heterostructures have been studied by means of photoluminescence and Raman scattering. It is established the correlation between the photoluminescence line shape ...
  • Optical constants of surface layer on gadolinium gallium garnet: ellipsometric study 
    Belyaeva, A.I.; Galuza, A.A.; Grebennik, T.G.; Yuriyev, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A multiple angle ellipsometric method is used for measurements of thin film layers on substrates. The method evaluates fundamental optical constants and thicknesses of the film layers. Dielectric functions of the surface ...
  • Optically controlled 2D tunnelling in GaAs delta-doped p-n junction 
    Vitusevich, S. A.; Forster, A.; Belyaev, A. E.; Glavin, B. A.; Indlekofer, K. M.; Luth, H.; Konakova, R. V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    A new type of an optically controlled tunnelling process in a specially designed Esaki diode is investigated. The additional peak appears due to tunnelling of 2D electrons accumulated at ground state of delta doped layers ...
  • Optical properties of thin metal films 
    Kovalenko, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Optical constants of metallic thin films made from: Ag, Au, Hf, Ir, Mo, Nb, Os, Pd, Pt, Re, Rh, Ru, Ta, W, Zr were determined on the basis of measured index of refraction in region of wavelength λ = 241216 Å. Two types ...
  • Optoelectronic sensor of longitudinal and angular displacements 
    Dlugaszek, A.; Jabczynski, J.; Janucki, J.; Skrzeczanowski, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    In the sensor a triangulation method of displacement measurement has been used. A method of sensor calibration using interferometric distance measurements has been elaborated. Linearity and resolution investigations have ...

Пошук


Розширений пошук

Перегляд

Мій обліковий запис