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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2000, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Photoresponse of Schottky-barrier detector under strong IR laser excitation 
    Asmontas, S.; Seliuta, D.; Sirmulis, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Peculiarities of the photovoltaic effect in Ti/n-Si Schottky contact have been studied experimentally under infrared (IR) laser excitation at wavelengths 2.79, 3, 5, 7 and 10.6 mm. We demonstrate that strong laser excitation ...
  • Pseudomorphic modulation-doped AlGaAs/InGaAs/GaAs heterostructures with strong manifestation of many-body effects 
    Masselink, W.T.; Kissel, H.; Mueller, U.; Walther, C.; Mazur, Yu.I.; Tarasov, G.G .; Rudko, G.Yu.; Valakh, M.Ya.; Malyarchuk, V.; Zhuchenko, Z.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Photoluminescence (PL) study of pseudomorphic heavily modulation-doped AlxGa₁₋xAs/InyGa₁-yAs/GaAs heterostructures shows fundamental changes in the PL spectrum under excitation pumping and/or temperature increase. In most ...
  • Residual error after non-uniformity correction 
    Borovytsky, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The paper represents the technique for residual error evaluation after two-points linear non-uniformity correction. This technique takes into consideration parameters of an imaging system, reference sources, non-linearity ...
  • Science and technology excimer laser complex and examples of its applications 
    Baschenko, S.M.; Blonskiy, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Science and technology multi-purposes, wide-functional excimer laser complex consisting of two precisely and fine synchronized excimer lasers and assembled on the common optical table and added by high efficient Stimulated ...
  • Some features of two-photon absorption in static electric field 
    Griban, V.M.; Melnichuk, O.V.; Ovander, L.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We considered the effect of static uniform electric field on the process of two-photon excitonic absorption of light in crystals. The matrix element that determines the above process was calculated using a linear (in the ...
  • Strain effect in surface acoustic wave elements with a piezoelectric acoustic line and sensors based on this effect 
    Lepikh, Ya.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The results of investigations of strain effect in surface acoustic wave (SAW) elements with a piezoelectric ceramic (PC) acoustic line are presented. The choice of PC material for acoustic line is substantiated. Some ...
  • Theoretical investigation of light absorption and scattering by nanoparticles 
    Pokutnyi, S.I.; Kovalchuk, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In the framework of the dipole approximation we predict theoretically high magnitudes of: (1) oscillator strength transitions, and (2) the resonance light cattering (σss(w, a)) and absorption (σabs(ω, a)) cross-sections. ...
  • Ultrasound effect on radiation damages in boron implanted silicon 
    Romanjuk, B.; Krüger, D.; Melnik, V.; Popov, V.; Olikh, Ya.; Soroka, V.; Oberemok, O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The radiation defect distribution in boron implanted Si with and without ultrasound (US) treatment have been investigated. Obtained results have shown the significant influence of the in situ US treatment on the defect ...

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