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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 1 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2001, № 1 за назвою

Сортувати за: Порядок: Результатів:

  • Activation of porous Si blue emission due to preanodization ion implantation 
    Rozhin, A.G.; Klyui, N.I.; Litovchenko, V.G.; Melnik, V.P.; Romanyuk, B.N.; Piryatinskii, Yu.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Implantation of B⁺, N⁺, and B⁺+N⁺ ions into initial silicon wafers was carried out before anodization process. The results of photoluminescent (PL) study of porous Si samples prepared on B⁺ or N⁺ implanted wafers show a ...
  • Aging of ZnS:Mn thin - film electroluminescent devices grown by two different atomic-layer epitaxial processes 
    Vlasenko, N.A.; Kononets, Ya.F.; Denisova, Z.L.; Kopytko, Yu.V.; Veligura, L.I.; Soininen, El.; Tornqvist, R.O.; Vasama, K.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Electroluminescent characteristics and the photodepolarization spectra of ZnS:Mn thin-film electroluminescent devices made with two different atomic-layer epitaxy processes based on chlorine and metalorganic precursors ...
  • Crystallochemistry of defects in lead telluride films 
    Freik, D.M.; Ruvinskii, M.A.; Ruvinskii, B.M.; Galushchak, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The crystallochemical model of vapor-phase epitaxy of the lead telluride films has been proposed with the supposition about the simultaneous formation of singly charged, doubly charged and electroneutral Frenkel defects ...
  • Development of the physical insight into the nature of the factors that control electrophysical and other properties of semiconductors 
    Baranskii, P.I.; Babich, V.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Evolution of the physical insight into the nature of main factors that influence the energy band structure formation in semiconductors, and, hence, their basic electrophysical, optical, thermoelectrical and even mechanical ...
  • Difference harmonic generation due to spin-flip transitions in an asymmetric quantum well 
    Korovin, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The difference harmonic generation in an asymmetric quantum well based on AlSb/InSb heterostructures has been calculated. The intersubband electron spin-flip transitions are analyzed in the framework of the three-band Kane ...
  • Dipole properties of the upper rim phosphorylated calix[4]arenes in the Langmuir-Blodgett films 
    Nesterenko, B.O.; Kazantseva, Z.I.; Stadnyk, O.A.; De Rossi, D.; Kalchenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    π-A - diagrams, ellipsometry and contact potential difference measurements were used to study the preparation and surface potential of calixarenes LBFs modified with phosphorylated groups at upper molecular rim (see text). ...
  • Effect of surface condition on strain in semiconductor crystal sample 
    Serdega, B.K.; Nikitenko, E.V.; Prikhodenko, V.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Using the optical-polarization technique with polarization modulation, we measured stresses due to surface tension in a single-crystalline silicon sample. Optical anisotropy distribution along the normal to the sample ...
  • Electrical properties of macroporous silicon structures 
    Karachevtseva, L.A.; Lytvynenko, O.A.; Malovichko, E.A.; Sobolev, V.D.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The dependencies of electron conductivity, concentration and mobility on pore size and concentration were investigated for macroporous silicon structures. The electron conductivity and concentration in two-layer structures ...
  • Electronic properties of silicon surface at different oxide film conditions 
    Kirillova, S.I.; Primachenko, V.E.; Venger, E.F.; Chernobai, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We used measurements of temperature and electric field dependencies of surface photovoltage to study electronic properties of (100) n-silicon surface after its thermal and chemical oxidation, as well as after oxide films ...
  • Features of electrical charge transfer in porous silicon 
    Monastyrskii, L.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The thermostimulated depolarization (TSD) spectra of porous silicon (PS) in the range of temperatures 77 - 450 K were investigated. Several wide bands of TSD current with different values referred to different types of PS ...
  • Optical biosensors based on the surface plasmon resonance phenomenon: optimization of the metal layer parameters 
    Snopok, B.A.; Kostyukevich, K.V.; Lysenko, S.I.; Lytvyn, P.M.; Lytvyn, O.S.; Mamykin, S.V.; Zynyo, S.A.; Shepelyavyj, P.E.; Kostyukevich, S.A.; Shirshov, Yu.M.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Application of the evanescent wave phenomena (e.g. surface plasmon resonance) in the chemical and biochemical sensors provides both optimal conditions for registration of specific interactions and high sensitivity. At the ...
  • Structural investigations of annealed ZnS:Cu, Ga film phosphors 
    Lytvyn, O.S.; Khomchenko, V.S.; Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Prokopenko, I.V.; Rodionov, V.Ye.; Tzyrkunov, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various ...
  • Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices 
    Kostyukevych, S.A.; Moskalenko, N.L.; Shepeliavyi, P.E.; Girnyk, V.I.; Tverdokhleb, I.V.; Ivanovsky, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Modern holographic protective elements used as emblems against counterfeiting are being more complicated as they should oppress criminal world. 2D, 3D, 3D rainbow holograms or simple diffraction structures protecting ...

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