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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2001, том 4 за назвою

Сортувати за: Порядок: Результатів:

  • Refractory contact to a-SiC produced by laser technology methods 
    Fedorenko, L.L.; Kiseleov, V.S.; Svechnikov, S.V.; Yusupov, M.M.; Beketov, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Developed in the paper are method and technological scheme to obtain ohmic contacts (OC) to a-SiC(:N), Nd - Na ~1 - 3.10¹⁸ cm⁻³ by pulse laser deposition (PLD) of multilayer structures Ni/W/Si₃N₄/W and the following laser ...
  • Short-wave photodetectors based on fine grain-sized poly-Si films 
    Agaev, F.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Photoelectric properties of polycrystalline silicon films under illumination were investigated. It was shown that polysilicon films with fine grain sizes may be used as short-wave photodetectors, due to presence of shallow ...
  • Silver-related local centres in cadmium sulfide 
    Borkovskaya, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Markevich, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Silver-related defects and their diffusion in CdS crystals were investigated. The impurity was introduced in the crystal and extracted from it under electric field Ed = 10² V/cm at T = 300-450°C both parallel and perpendicular ...
  • Singular peculiarities of a plane wave diffracted on half-plane 
    Anokhov, S.; Khizhnyak, A.; Lymarenko, R.; Soskin, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We analyzed singular properties of edge dislocation waves («EDW») - the main information component of the field formed at plane wave diffraction on half-plane. It is shown that analytical structure of this wave is completely ...
  • Some features of transverse photovoltage in semiconductor heterostructure and Schottky contact 
    Shekhovtsov, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We investigated transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for Ge-GaAs heterostructures and NbN-GaAs Schottky ...
  • Some peculiarities of the mechanism of irreversible photostructural transformations in thin As-S-Se layers 
    Stronski, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The present paper is concerned with the peculiarities of the mechanism of irreversible photostructural transformations in As-S-Se layers. The starting point of the irreversible photostructural transformations is the state ...
  • Spectral dependence of the photomagnetic effect in porous silicon 
    Vakulenko, O.V.; Kondratenko, S.V.; Serdega, B.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Measurements of the photomagnetic effect spectra of PS/c-Si were carried out. Obtained results were explained by influence of the spatial charge region of the heterojunction between wide-band porous silicon and c-Si substrate ...
  • Spectral properties of reflective interference filters 
    Pervak, V.Yu.; Poperenko, L.V.; Pervak, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The spectral properties of band reflective interference filters are investigated. The operation of the filter is based on the method of residual rays. Angular dependences of the filter transmission bandshape on the parameters ...
  • SPR-spectroscopy of protein molecules adsorbed in microwave field 
    Berezhinsky, L.I.; Chegel', V.I.; Shirshov, Yu.M.; Dovbeshko, G.I.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    A possibility to use surface plasmon resonance (SPR) in the investigations of the microwave radiation influence upon proteins in the process of their adsorption on the gold surface and their interaction with other proteins. ...
  • Stimulated by heating-up changes of lux-brightness characteristics of semi-in sulating speciallyundoped GaAs crystals 
    Litovchenko, N.M.; Prokhorovich, A.V.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    It was shown that thermal treatment of semi-insulating specially undoped gallium arsenide leads to significant changes of lux-brightness characteristics of inter- impurity and impurity bands in the spectra of impurity ...
  • Structural investigations of annealed ZnS:Cu, Ga film phosphors 
    Lytvyn, O.S.; Khomchenko, V.S.; Kryshtab, T.G.; Lytvyn, P.M.; Mazin, M.O.; Prokopenko, I.V.; Rodionov, V.Ye.; Tzyrkunov, Yu.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    X-ray and atomic force microscopy techniques were used for investigations of crystalline structure and nano-morphology of ZnS:Cu thin films. The films were deposited by electron beam evaporation on substrates of various ...
  • Study of photorefractive effect in crystals Pb₅Ge₃O₁₁:Cu and Pb₅Ge₃O₁₁ 
    Gnatovsky, O.; Linnik, V.; Pryadko, L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    For the first time photorefractive properties of Pb₅Ge₃O₁₁:Cu were studied and compared with those of Pb₅Ge₃O₁₁crystals. Diffraction efficiency of holographic grating registered on Pb₅Ge₃O₁₁:Cu and Pb₅Ge₃O₁₁crystals was ...
  • Study of postimplantation annealing of SiC 
    Avramenko, S.F.; Kiselev, V.S.; Romanyuk, B.N.; Valakh, M.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The implanted layer resistance R/□ thermoelectromotive force, optical transmittance T and open-circuit photovoltage measurements were made on epitaxial n-type 6H-SiC samples and Lely-grown 6H-SiC crystals implanted at 30o ...
  • Surface enhanced infrared absorption of nucleic acids on gold substrate 
    Dovbeshko, G.I.; Chegel, V.I.; Gridina, N.Y.; Repnytska, O.P.; Shirshov, Y.M.; Tryndiak, V.P.; Todor, I.M.; Zynio, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Data on surface enhanced infrared absorption (SEIRA) of nucleic acids deposited on the metal surface have been obtained in the experiment in FTIR reflectance mode. As metal surface, we used Au of 200-500 Е thickness on ...
  • Technology and experimental studies of contacts for microwave diodes based on interstitial phases 
    Boltovets, N.S.; Ivanov, V.N.; Konakova, R.V.; Kurakin, A.M.; Milenin, V.V.; Soloviev, E.A.; Verimeychenko, G.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    We consider some aspects of manufacturing technology for films of refractory metals nitrides and borides. These films are used for barrier and ohmic contacts, as well as contacts with antidiffusion layers in gallium arsenide ...
  • The impact of laser shock waves on anodic oxide - compound semiconductor interface 
    Yakovyna, V.S.; Berchenko, N.N.; Nikiforov, Yu.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The present work shows that the induced positive charge value at the anodic oxide -HgCdTe (AO-MCT) interface reaches its constant value (6.0±1.0)•10¹¹ cm⁻² under laser shock wave (LSW) treatment. We demonstrate that this ...
  • The influence of heating temperature and sizes of components upon stresses and defect formation in semiconductor structures under isothermal heating 
    Agueev, O.A.; Svetlichny, A.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    In the work a complex analysis of the influence of size of components and heating temperature upon stresses and defect formation in substrates of the Si-SiO₂ structures is done. It is determined that alteration of shape ...
  • Thickness dependences of optical constants for thin layers of some metals and semiconductors 
    Kovalenko, S.A.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The review comprises investigations devoted to determination of refractive index and absorption coefficient dependences on thickness for thin films of metals and atomic semiconductors. It has been shown that erroneous ...
  • Using non-organic resist based on As-S-Se chalcogenide glasses for combined optical/digital security devices 
    Kostyukevych, S.A.; Moskalenko, N.L.; Shepeliavyi, P.E.; Girnyk, V.I.; Tverdokhleb, I.V.; Ivanovsky, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Modern holographic protective elements used as emblems against counterfeiting are being more complicated as they should oppress criminal world. 2D, 3D, 3D rainbow holograms or simple diffraction structures protecting ...
  • X-ray characterization of ZnSe single crystals doped with Mg 
    Fedorov, A.G.; Zagoruiko, Yu.A.; Fedorenko, O.A.; Kovalenko, N.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    Doping of cubic ZnSe with certain impurities like Mg or Mn during crystal growth causes the increased contents of the hexagonal phase in the crystal or even the transformation to hexagonal wurtzite modification that possess ...

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