Vlaskina, S.I.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
Heavily doped by nitrogen single crystals of 6H-SiC were completely transformed into 3C-SiC ones by annealing in vacuum at presence of Si vapor for 1 hour at 2180 K or 4 hours at 2080 K. Mechanism of solid-to-solid ...