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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Pereira Jr., M.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this paper, intersubband optical absorption spectra are computed from an optical susceptibility derived from the many-body formalism. The theory is valid for both non-equilibrium and equilibrium conditions. Numerical ...
  • Kunets, V.P.; Kulish, N.R.; Lisitsa, M.P.; Bryksa, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations ...
  • Merabtine, N.; Amourache, S.; Saidi, Y.; Zaabat, M.; Kenzai, Ch. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. ...
  • Soskin, S.M.; Sheka, V.I.; Linnik, T.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Noise-induced escape from the metastable part of potential is considered on time scales preceding the formation of quasiequilibrium within that part of the potential. It is shown that, counterintuitively, the escape flux ...
  • Zelensky, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We investigated errors arising in calculations of optical signals in non-linear laser spectroscopy due to neglection of non-uniformity in cross-beam laser power distribution. The following three cases of non-linear emission ...
  • Odarich, V.A.; Poperenko, L.V.; Staschuk, V.S.; Filipov, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Ellipsomety examination of dielectric sheetings and measured of reflection spectrum at normal incidence there carried out. A film of Al₂O₃ on a surface of copper mirrors of a diamond microgrinding was deposited. The thickness ...
  • Dmitruk, N.L.; Fursenko, O.V.; Kondratenko, O.S.; Romanyuk, V.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    This work is aimed at optical characterization of thin Au films by multiple-angle-of-incidence reflectance ellipsometry at the fixed wavelength (632.8 nm) in standard and attenuated total reflection (ATR) modes in contact ...
  • Morozovska, A.N.; Eliseev, E.A.; Obukhovsky, V.V.; Lemeshko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We propose the theory of the micro-domains (MD) formation in ferroelectric photorefractive crystals appeared under steady illumination by laser beam perpendicular to the polar axis. The crystal has the donor level made ...
  • Kashirina, N.I.; Lakhno, V.D.; Sychyov, V.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been ...
  • Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie ...
  • Valakh, M.Ya.; Strelchuk, V.V.; Kolomys, O.F.; Hartnagel, H.L.; Sigmund, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and ...
  • Baran, M.; Bulakh, B.; Korsunska, N.; Khomenkova, L.; Yukhymchuk, V.; Sheinkman, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Si-rich SiO₂ films prepared by r.f. magnetron sputtering and annealed at 1150 °C are investigated by photoluminescence, Raman and EPR methods. It is found that emission spectrum of as-prepared samples contains one broad ...
  • Budnyk, O.P.; Lymarenko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The paper is devoted to developing methods of analytical and experimental investigations of diffraction and interference phenomena used in test systems for optical elements. The theoretical analysis and experimental results ...
  • Salkov, E.A.; Svechnikov, G.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Physical peculiarities of the equilibrium thermal radiation have been considered within the black body model for the case of ultimate restrained photon flows inside an ideal ("lossless") optical communication channel. ...
  • Morozovska, A.N.; Obukhovsky, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In the paper we theoretically consider the dynamics of the inner field and the spatial-temporal features of periodical photoinduced light scattering in photo-ferroelectrics caused by stationary laser illumination. Not only ...
  • Serdega, B.K.; Venger, E.F.; Matyash, I.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Linear dichroism induced by uniaxial compression strain in semiconductor silicon samples was studied with modulation spectroscopy technique using modulation of electromagnetic radiation polarization. We obtained a spectral ...

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