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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2003, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Capture coefficients of free excitons by shallow acceptors and donors in gallium arsenide 
    Glinchuk, K.D.; Litovchenko, N.M.; Strilchuk, O.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    An analysis of the 4.2 K exciton luminescence spectra of semi-insulating GaAs crystals with different concentrations of shallow acceptors (С) and donors (Si) is given. As a result, the 4.2 K capture coefficients of free ...
  • Design and testing of iodine cells for metrological laser application 
    Negriyko, A.M.; Boyko, O.V.; Kachalova, N.M.; Khodakovskiy, V.M.; Klochko, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The design and performance of iodine vapor cells for frequency stabilized laser applications are presented. The traditional design of iodine vapor cell and special development of cell for fluorescence applications are ...
  • Destabilizing factors in operation of short-cavity He-Ne laser 
    Kononchuk, G.L.; Stukalenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The influence of longitudinal manetic field (MF) on a position of polarization planes (PPs) of the main modes (λ = 0.63 mm) in dependency on the generation frequency and off-axis mode presence was investigated in this work. ...
  • Domino phase retrieval algorithm for structure determination using electron diffraction and high resolution transmission electron microscopy patterns 
    Chukhovskii, F.N.; Poliakov, A.M.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Direct method formalism to determine atomic structures using the electron diffraction data is here aimed at a general solution of the phase retrieval problem, consequently combining the electron diffraction (ED) and the ...
  • Error detection and debugging on information in communication system using single electron circuit based binary decision diagram 
    Biswas, A.K.; Sarkar, S.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In digital information error happens in a communication system due to path delay or processing error/delay and can be detected by logical circuit which has been implemented here by binary decision diagrams with single ...
  • Heat-resistant ohmic and barrier contacts for GaAs-based microwave devices 
    Ivanov, V.N.; Konakova, R.V.; Milenin, V.V.; Stovpovoi, M.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied barrier and ohmic contacts that are used when developing GaAs-based microwave devices. It is shown that Au-Mo-TiBx-n-GaAs barrier contacts have higher thermal stability than Au-Ti-n-GaAs ones. This is due to ...
  • Influence of cation vacancy related defects on the self-assembly processes in CdSe/ZnSe quantum dot heterostructures 
    Borkovska, L.V.; Korsunska, N.O.; Kushnirenko, V.I.; Sadofyev, Yu.G.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A spatial distribution of the cation vacancy related defects and their influence on the formation processes of self-assembled nanoislands in CdSe/ZnSe heterostructures were investigated by photoluminescence methods. ...
  • Injection currents in lamellar crystals of gallium telluride 
    Madatov, R.S.; Tagiyev, T.B.; Gabulov, I.A.; Abbasova, T.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The results of researches of electrical properties and injection currents in lamellar samples of p-type gallium telluride with the purpose of determination of charge transfer mechanism both in the Ohm law regime and in the ...
  • Investigation of superlattice structure parameters using quasi-forbidden reflections 
    Kladko, V.P.; Datsenko, L.I.; Korchovyi, A.A.; Machulin, V.F.; Lytvyn, P.M.; Shalimov, A.V.; Kuchuk, A.V.; Kogutyuk, P.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We studied possibilities of a nondestructive X-ray technique for testing short-period strained GaAs-AlAs superlattices. An analysis of the quasi-forbidden 200 reflections may be used for determination of superlattice layer ...
  • Many particle and bandstructure effects in intersubband quantum well optics 
    Pereira Jr., M.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this paper, intersubband optical absorption spectra are computed from an optical susceptibility derived from the many-body formalism. The theory is valid for both non-equilibrium and equilibrium conditions. Numerical ...
  • Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots 
    Kunets, V.P.; Kulish, N.R.; Lisitsa, M.P.; Bryksa, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations ...
  • New nonlinear model to determine Cgs and Cgd capacities of GaAs MESFET 
    Merabtine, N.; Amourache, S.; Saidi, Y.; Zaabat, M.; Kenzai, Ch. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    New nonlinear model for simulating physical and geometrical parameters to determine the junctions capacities of "the Gallium Arsenide Metal Semiconductor Field Effect Transistor" GaAs MESFET are represented in this paper. ...
  • Noise-induced escape flux on time-scales preceding quasistationarity 
    Soskin, S.M.; Sheka, V.I.; Linnik, T.L. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Noise-induced escape from the metastable part of potential is considered on time scales preceding the formation of quasiequilibrium within that part of the potential. It is shown that, counterintuitively, the escape flux ...
  • Non-uniformity of cross-beam laser power distribution as a source of errors in non-linear spectroscopy 
    Zelensky, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We investigated errors arising in calculations of optical signals in non-linear laser spectroscopy due to neglection of non-uniformity in cross-beam laser power distribution. The following three cases of non-linear emission ...
  • Optical characteristics of Al₂O₃ oxide coatings on copper mirrors made by diamond microgrinding 
    Odarich, V.A.; Poperenko, L.V.; Staschuk, V.S.; Filipov, Y.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Ellipsomety examination of dielectric sheetings and measured of reflection spectrum at normal incidence there carried out. A film of Al₂O₃ on a surface of copper mirrors of a diamond microgrinding was deposited. The thickness ...
  • Optical characterization of thin Au films by standard and polaritonic ellipsometry 
    Dmitruk, N.L.; Fursenko, O.V.; Kondratenko, O.S.; Romanyuk, V.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    This work is aimed at optical characterization of thin Au films by multiple-angle-of-incidence reflectance ellipsometry at the fixed wavelength (632.8 nm) in standard and attenuated total reflection (ATR) modes in contact ...
  • Photo-microdomains in ferroelectrics: formation and light scattering caused by them 
    Morozovska, A.N.; Eliseev, E.A.; Obukhovsky, V.V.; Lemeshko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We propose the theory of the micro-domains (MD) formation in ferroelectric photorefractive crystals appeared under steady illumination by laser beam perpendicular to the polar axis. The crystal has the donor level made ...
  • Properties of the shallow D-centers in semiconductors with polar and covalent binding 
    Kashirina, N.I.; Lakhno, V.D.; Sychyov, V.V.; Sheinkman, M.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The theoretical consideration of the energy of the lowest singlet and triplet terms of shallow D¯-centers (two electrons, bound with one-charge Coulomb center) in semiconductors with an ionic and covalent binding has been ...
  • Regularities of visible photoluminescence creation in low-dimensional silicon structures 
    Manoilov, E.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The evolution of time-resolved photoluminescence (PL) spectra in Au-doped nanocrystalline silicon films produced by laser ablation has been studied. The PL spectra with a relaxation time of nanoseconds are broad; they lie ...
  • Resonance Raman scattering by intersubband plasmon-phonon excitations in InAs/AlSb structures 
    Valakh, M.Ya.; Strelchuk, V.V.; Kolomys, O.F.; Hartnagel, H.L.; Sigmund, J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    Intersubband plasmon-phonon excitations in InAs/AlSb with InSb- and AlAs-like interfaces were studied using the Raman scattering method. It was found that InSb interface is characterized by a decreasing concentration and ...

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