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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2004, том 7 за назвою

Сортувати за: Порядок: Результатів:

  • Paramagnetic defects related to photoluminescence in SiOx films 
    Rudko, G.Yu.; Vorona, I.P.; Indutnyy, I.Z.; Ishchenko, S.S.; Shepeliavyi, P.E.; Yukhymchuk, V.O. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The correlation between the photoluminescence and paramagnetic defects is studied in SiOx films grown by vacuum thermal deposition and annealed at 750 ⁰C. The as-grown samples exhibit a wide structureless EPR line centered ...
  • Partial polarization switching in ferroelectrics-semiconductors with charged defects 
    Morozovska, A.N.; Eliseev, E.A.; Cattan, E.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    We propose the phenomenological description of ferroelectric disordering caused by charged defects in ferroelectric-semiconductors. The good agreement between the obtained experimental results for PZT films and theoretical ...
  • Passivation of silicon surface by ultrathin dielectric film in M/Si/nematic/ITO structures 
    Gritsenko, M.I.; Kucheev, S.I.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    In this work the experimental observation of passivation of silicon surface by ultrathin dielectric film in Al/Si/nematic/Indium Tin Oxide(ITO) structure performed on the base of low resistive (~ several Ωxcm) n-type ...
  • Peculiarities and asymmetry of polarization reversal in Pt/PZT-film/Pt:Ti/SiO₂/Si-substrate structures in pyroelectric response investigations 
    Bravina, S.L.; Cattan, E.; Morozovsky, N.V.; Remiens, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    By RF magnetron sputtering method the Pt/PZT-film/Pt:Ti-sublayer/SiO₂/Si-substrate structures were prepared and pyroelectric response amplitude and phase behaviour under external voltage application was investigated by ...
  • Photoelectrical characteristics of two-dimensional macroporous silicon structures 
    Karachevtseva, L.A.; Onischenko, V.F.; Karas, M.I.; Dandur’yants, O.I.; Sizov, F.F.; Stronska, O.J. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Photoelectrical properties of macroporous silicon structures were investigated in the near infrared spectral range (1 to 8 μm). Angular dependences of photoconductivity, its amplification, realization of the single-mode ...
  • Photoluminescence characterization of Al/Al₂O₃/InP MIS structures passivated by anodic oxidation 
    Mahdjoub, A.; Bouredoucen, H.; Djelloul, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Metal-insulator-semiconductor (MIS) structures were produced by electron beam heating evaporation of Al₂O₃ on InP. Polyphosphate thin films with the thickness of 100 to 150 A were used to passivate the interface InP/Insulator. ...
  • Photon Green’s functions theory for Coulomb correlated quantum well lasers 
    Pereira Jr., M.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    A photon Green’s function theory is used to incorporate Bethe-Salpeter-like many body corrections in the computations of output spectra of semiconductor quantum well lasers. Coulomb, quantum-confinement, multiple valence ...
  • Polymeric compositions having near IR photoconduction 
    Davidenko, N.A.; Kuvshinsky, N.G.; Melenevsky, D.A.; Derevyanko, N.A.; Ishchenko, A.A.; Kulinich, A.V.; Neilands, O.; Plotniece, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Peculiar properties of carrier photogeneration in the polymer compositions based on polystyrene containing substituted tetrathiafulvalenes – electron donors, 2,4,5,7-tetranitro-9-fluorenone – acceptor of electrons, cationic ...
  • Portable three-wavelength standard for energy unit of pulse laser radiation 
    Owsik, J.; Zarwalska, A.; Janucki, Ja.; Samoylov, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    New instrument for applications in metrological measurements of laser pulse energy is presented. Due to its parameters, it can be used as a standard for energy unit of pulse laser radiation. The instrument consists of a ...
  • Possibility of a laser action under electrochemical excitation in a cell with a multilayer working electrode 
    Vasyanovitch, D.A.; Zholudov, Y.T.; Rozhitskii, N.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The possibility of laser action at the solution/working electrode interface in an electrochemical cell with modified electrode by multilayer active organic electrochemiluminescer is considered. Physical and mathematical ...
  • Properties of CdTe thin films prepared by hot wall epitaxy 
    Bilevych, Ye.O.; Boka, A.I.; Darchuk, L.O.; Gumenjuk-Sichevska, J.V.; Sizov, F.F.; Boelling, O.; Sulkio-Cleff, B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    CdTe thin films were grown on different substrates: BaF₂ (111), polished Si (100), SiO₂, bulk CdTe (110) and HgxCd₁₋xTe layers by hot wall epitaxy (HWE). Chosen temperature parame-ters and technological process of thin ...
  • Properties of optical microsensor based on observation of whispering-gallery modes 
    Datsyuk, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Formulae for the intensity of the resonant spontaneous electric-dipole emission are derived in the framework of classical electrodynamics and quantum optics making allowance for inhomogeneous light absorption. Using these ...
  • Radiation effects on electronic circuits in a spatial environment 
    Merabtine, N.; Benslama, M.; Benslama, A.; Sadaoui, Dj. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The failings bound to the deterioration of the components under irradiations are complex and numerous. This paper describes the different kinds of radiations present in the space as well as their interactions with the ...
  • Radiation-stimulated relaxation of internal mechanical straines in homoepitaxial GaP films 
    Gentsar, P.A.; Kudryavtsev, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The electroreflectance method based on the electrolyte technique is used for investigation of electron transitions E₀, E₀ + Δ₀ in homoepitaxial films n-GaP (111) with the electron concentration 5.7*10²³ m⁻³ before and after ...
  • Radiative recombination in BiI₃(Mn) and BiI₃(Cr) layered single crystals 
    Motsnyi, F.V.; Dorogan, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The photoluminescence spectra of BiI₃(Mn) and BiI₃(Cr) single crystals were studied. The new bands at λ = 1.1 and λ = 1.83 μm were registered at the temperature 4.2 K. It was shown that the first and second bands arise due ...
  • Raman spectra and electron microscopic investigations of the sections of modified As₂S₃ glasses 
    Mateleshko, N.; Mitsa, V.; Borkach, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Chalcogenide vitreous semiconductors (ChVS) are used as memory elements, elements of fiber, integral and power optics [1–6]. The change of the synthesis conditions results in the change of structure and, as a consequence, ...
  • Recording of high efficiency diffraction gratings by He-Ne laser 
    Min'ko, V.I.; Shepeliavyi, P.E.; Dan'ko, V.A.; Romanenko, P.F.; Litvin, O.S.; Indutnyy, I.Z. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    The investigation results of holographic diffraction gratings recording processes by radiation of helium-neon laser have been represented. Inorganic As₄₀S₂₀Se₄₀ photoresist treated by the newly developed selective etching ...
  • Recording the high efficient diffraction gratings by using He-Cd laser 
    Kostyukevych, S.A.; Morozovska, A.N.; Minko, V.I.; Shepeliavyi, P.E.; Kudryavtsev, A.A.; Rubish, V.M.; Rubish, V.V.; Tverdokhleb, I.V.; Kostiukevych, A.S.; Dyrda, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    High efficient holographic diffraction gratings with spatial frequencies from 600 to 3600 mm⁻¹ have been recorded using As₄₀S₆₀–хSeх (х = 0, 10, 20) photoresist layers and He-Cd laser operating at the wavelength λ = 440 ...
  • Research of structures with corrugated photoreceiving surface 
    Karimov, A.V.; Yodgorova, D.M.; Yakubov, E.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Goffered photoreceiver surface in active regions perspective for manufacturing photosensitive structures can be form by chemical and epitaxial technology. Microreliefs are created on initial surface of semiconductor material ...
  • RHEED digital image analysis system for in-situ growth rate and alloy composition measurements of GaAs-based nanostructures 
    Sghaier, H.; Bouzaiene, L.; Sfaxi, L.; Maaref, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Monitoring the intensity of the reflected spot in a RHEED image is the most important method used to control the growth of semiconductors in MBE. The accurate control of both layer thickness and alloy composition is ...

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