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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2005, том 8 за назвою

Сортувати за: Порядок: Результатів:

  • Porous nanostructured InP: technology, properties, application 
    Arsentyev, I. N.; Bobyl, A.B.; Konnikov, S.G.; Tarasov, I.S.; Ulin, V.P; Shishkov, M.V.; Boltovets, N.S.; Ivanov, V.N.; Belyaev, A.E.; Konakova, R.V.; Kudryk, Ya.Ya.; Kamalov, A.B.; Lytvyn, P.M.; Markovskiy, E.P.; Milenin, V.V.; Red’ko, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We prepared porous InP (100) substrates with a nanostructured surface relief on which InP epitaxial films were grown. The structure, morphological, and photoluminescence properties of nanostructured substrates and InP ...
  • Quadric hologram-based self-conjugation of vortex beams 
    Polyanskii, P.V.; Felde, Ch.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Self-conjugation of singular (vortex) beams by a static nonlinearly recorded hologram is reported. Diagnostics of phase-conjugated vortices is implemented using an original technique based on Young’s model of diffraction ...
  • Radiation power spectral distribution of two electrons moving in magnetic fields 
    Konstantinovich, A.V.; Melnychuk, S.V.; Konstantinovich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Integral expressions for spectral distributions of the radiation power for systems of non-interacting point charged particles moving on arbitrary trajectory in electromagnetic fields in isotropic transparent media and in ...
  • Revealing the hopping mechanism of conduction in heavily doped silicon diodes 
    Borblik, V. L.; Shwarts, Yu. M.; Shwarts, M. M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Measurements of temperature dependences of excess tunnel current in heavily doped silicon p-n junction diodes at fixed values of the forward bias are carried out in liquid helium temperature region. In some voltage interval, ...
  • Review of monograph 
    Svechnikov, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Review of monograph: A.A. Akopyan, O. Yu. Borkovskaya, N.L. Dmitruk, A.V. Karimov, R.V. Konakova, V.V. Melenin, A.V. Sachenko, M.N. Tursunov, D.M. Yodgorova. "Photoconverters with AlGaAs/GaAs Heterojunction on Textured ...
  • Screening effects caused by electron-electron interactions in crystaline structures with intermediate dimensionality 
    Tovstyuk, N.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    In the paper studied are polarization properties of an electron subsystem in the structures of intermediate dimension, particularly, in the quasi-two-dimensional structures depending on the degree of quasi-two-dimensionality. ...
  • Screen-printed p-CdTe layers for CdS/CdTe solar cells 
    Klad'ko, V.P.; Lytvyn, P.M.; Osipyonok, N.M.; Pekar, G.S.; Prokopenko, I.V.; Singaevsky, A.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Correlation of the recrystallization process technological parameters with the morphology and structure of screen-printed p-CdTe layers intended for CdS/CdTe solar cell fabrication has been established. The optimal regimes ...
  • Silicon photodiode and preamplifier operation characteristic properties under background radiation conditions 
    Hodovaniouk, V.M.; Doktorovych, I.V.; Butenko, V.K.; Yuryev, V.H.; Dobrovolsky, Yu.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The investigation results of a silicon photodiode (PD) operation with a preamplifier under background radiation conditions are presented. The preamplifier output signal and its frequency characteristic dependence on the ...
  • Some physical properties of Si₁₋xGex solid solutions using pseudo-alloy atom model 
    Jivani, A.R.; Trivedi, H.J.; Gajjar, P.N.; Jani, A.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Some electronic, thermodynamical and mechanical properties of Si1-xGex solid solution with an arbitrary (atomic) concentration (x) are studied using the pseudo-alloy atom model. This work is based on the pseudopotential ...
  • Spectroscopy of the solid solutions (Si₂)₁₋x(ZnS)x 
    Sapaev, B.; Saidov, A.S.; Bacherikov, Yu.Yu.; Konakova, R.V.; Okhrimenko, O.B.; Dmitruk, I.N.; Galak, N.P.; Sapaev, I.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Presented are the investigation of (Si₂)₁₋x(ZnS)x solid solutions. Morphological, electrical, and optical properties of the solutions are investigated. Chemical components of the solid solutions are homogeneously distributed ...
  • Spin ballistic transport and quantum intreference in mesoscopic loop structures 
    Tralle, I.; Pasko, W. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    In the paper, a simple theory of quantum inteference in a loop structure caused by spin coherent transport and the Larmor precession of the electron spin is presented. A “spin ballistic” regime is supposed to occur, when ...
  • Spontaneous and Stimulated Emission Spectra for the Molecule ¹²⁴Xe³⁵Cl. 
    Zubrilin, N.G.; Osypov, S.I.; Pavlov, I.A.; Chernomorets., M.P.; Baschenko, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The influence of the isotopic composition of active medium on a lasing spectrum of a XeCl laser has been investigated. Spectra of spontaneous and stimulated emissions for monoisotopic ¹²⁴Xe³⁵Cl molecules were measured. The ...
  • Synthesis of highly doped Nd:YAG powder by the SOL-GEL method 
    Hajiesmaeilbaigi, F.; Farmahini, M. F.; Hasani, J.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The sol-gel method was used for synthesizing Nd:YAG powder. The process contains several steps, for example solving in acid, mixing, evaporation etc. The XRD analysis of prepared powder by sol-gel method showed that the ...
  • Technology of manufacturing the reliable silicon photoconverters with long operation time 
    Guseynov, N.A.; Askerov, Sh.Q.; Aslanov, Sh.S.; Agaev, M.N.; Gasanov, M.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    We offer to use an amorphous metal alloy Al₈₀Ni₂₀ as ohmic contact and current-collecting tracks to silicon photoconverters (PC) based on p-n junctions. Technological processes for production of silicon photosensitive ...
  • The nature of red emission in porous silicon 
    Khomenkova, L.Yu.; Korsunska, N.E.; Bulakh, B.M.; Sheinkman, M.K.; Stara, T.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The photoluminescence spectra of porous silicon at 77 and 300 K and their transformation during aging were investigated. The competition of two radiative recombination channels that have a common excitation mechanism was ...
  • Theory of two-dimensional photonic crystals with lamellar cylindrical pores 
    Glushko, A.E.; Glushko, E.Ya.; Karachevtseva, L.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Theoretical investigation of 2D photonic crystals containing intermediate layers on the surface of cylindrical pores is performed within the framework of the plane-wave model. We have analyzed how the third medium introduction ...
  • The role of optical phonons in electrons heating by IR radiation in Ge 
    Poroshin, V.N.; Sarbey, O.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    An expression for the coefficient of light absorption by “hot” electrons in many-valley semiconductors for carrier scattering by nonpolar optical phonons in dependence on the carrier temperature and electron concentration ...
  • The structure of glassy HgS–GeS₂ 
    Halyan, V.V.; Davydyuk, H.Ye.; Parasyuk, O.V.; Kevshyn, A.H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The glass HgS(x)-GeS2(₁₀₀-x) (0 ≤ x ≤ 50) was subjected to X-ray analysis. The radial distribution functions were calculated using the integral Fourier transformation based on X-ray scattering curves. The average interatomic ...
  • Unstable mixing regions in II-VI quaternary solid solutions 
    Deibuk, V.G.; Dremlyuzhenko, S.G.; Ostapov, S.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    The miscibility gaps and critical temperatures of the spinodal decompositions of the quaternary semiconducting epitaxial thin films CdMnHgTe and ZnMnHgTe have been calculated. Fitting the spinodal isotherms calculated from ...
  • Zn and Mn impurity effect on electron and luminescent properties of porous silicon 
    Primachenko, V.E; Kirillova, S.I.; Manoilov, E.G.; Kizyak, I.M.; Bulakh, B.M.; Chernobai, V.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Investigated in this work are por-Si/n-Si structures prepared by anodizing silicon in 1 % HF water solution, which was followed by natural aging in air and doping with Zn and Mn impurities. When aging, the oxide film of ...

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