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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 3 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2006, № 3 за назвою

Сортувати за: Порядок: Результатів:

  • Photoelectric properties of single crystals Ag₃In₅Se₉ 
    Huseynov, A.H.; Mamedov, R.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Low-resistance and high-resistance single crystals of Ag₃In₅Se₉ compound have been grown using the methods of zone recrystallization and slow cooling at a constant gradient of temperature. We have investigated spectral and ...
  • Polyassociative thermodynamic model of A²B⁶ semiconductor meltand phase equilibria in Cd-Hg-Te system. 4. p-T-x diagram of Cd-Hg-Te system 
    Moskvin, P.P.; Khodakovsky, V.V.; Rashkovets’kyi, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    p −T− x diagram of Cd-Hg-Te system is analyzed in the framework of the polyassociative solution model. The temperature dependence of the dissociation constant for ternary complexes, which describes the mixing effects, was ...
  • Simulation of multiwave pumped fiber Raman amplifiers 
    Felinskyi, G.S.; Korotkov, P.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The design model for development of optical fiber Raman amplifiers with the multiwavelength pumping scheme is proposed in this work. Our simulation based on the oscillator theory and spectroscopic model for the analysis ...
  • Spin-dependent transport in magnetic sandwiches in the effective-mass approximation 
    Los’, V.F.; Saltanov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    A theory describing a spin-dependent transport of electrons through a thin metallic (or insulator) nonmagnetic layer sandwiched between two ferromagnets is developed in the ballistic regime and current-perpendicular-to-plane ...
  • Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge₁₋xSix irradiated by fast electrons at the temperature 77 K 
    Abbasov, Sh.M.; Agaverdiyeva, Y.T.; Kerimova, T.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Ge₁₋xSix solid solutions are one of promissing materials for semiconductor technique. However, their electrical and optical properties, especially with silicon content more than 5 at. % have been little studied. In particular, ...
  • The influence of surface defects on the pinhole formation in silicide thin film 
    Belousov, I.V.; Grib, A.N.; Kuznetsov, G.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The growth of the CoSi layer was considered within the framework of the grain boundary diffusion model. The time dependences of the temperature due to the exothermic reaction of silicide formation as well as the dependences ...
  • Ultra-high field transport in GaN-based heterostructures 
    Vitusevich, S.A.; Danylyuk, S.V.; Danilchenko, B.A.; Klein, N.; Zelenskyi, S.E.; Drok, E.; Avksentyev, A.Yu.; Sokolov, V.N.; Kochelap, V.A.; Belyaev, A.E.; Petrychuk, M.V.; Luth, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns ...

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