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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9 за датою випуску

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2006, том 9 за датою випуску

Сортувати за: Порядок: Результатів:

  • Influence of physical and geometrical parameters on electrical properties of short gate GaAs MESFETs 
    Khemissi, S.; Merabtine, N.; Zaabat, M.; Kenzai, C.; Saidi, Y.; Amourache, S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the information sciences such as computer science, telecommunications, the treatment of signal or image transmission, the field effect components play an important role. In the frame of our work, we are interested in ...
  • Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures 
    Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V.; Lytvyn, O.S.; Kapitanchuk, L.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) ...
  • Micropatterning in bistable cholesteric device with Bragg's reflection 
    Gritsenko, M.I.; Kucheev, S.I.; Lytvyn, P.M.; Tishenko, V.G.; Tkach, V.M.; Yelshansky, V.B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In this work, the method to form bistable patterning in a cholesteric cell with Bragg’s reflection in the visible spectral range is demonstrated. In order to reach this, we used a Si/SiO₂ structure in which a potential ...
  • Characterization of charge trapping processes in fully-depleted UNIBOND SOI MOSFET subjected to γ-irradiation 
    Houk, Y.; Nazarov, A.N.; Turchanikov, V.I.; Lysenko, V.S.; Andriaensen, S.; Flandre, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    An investigation of radiation effect on edgeless accumulation mode (AM) p-channel and fully-depleted enhancement mode (EM) n-channel MOSFETs, fabricated on UNIBOND silicon on insulatior wafers (SOI), is presented in the ...
  • Discrimination of the saturated vapours of alcohols by the responses of assembly of piezoquartz sensors covered with metal stearates and their complexes with octadecylamine 
    Filippov, A.P.; Strizhak, P.E.; Denisyuk, D.I.; Serebry, T.G.; Ivaschenko, T.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The sensitivity of sensor assembly based on piezoquartz resonators (PQR) with the chemical coatings of the specified type relatively to the saturated vapours of several lowest alcohols is investigated. As the chemical ...
  • The influence of Cr concentration on time resolution of GaAs detectors 
    Fedorenko, L.L.; Linnik, L.F.; Linnik, L.G.; Yusupov, M.M.; Solovyov, E.A.; Sirmulis, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Investigated in this work were the influence of Cr dopant concentration and technological conditions of doping on photoconductivity (PhC) kinetics, dependence of PhC signal magnitude on voltage applied as well as the dynamic ...
  • Effect of symmetry center losses on energy bands and carrier kinematics in Zn₃As₂ and Cd₃As₂ 
    Chuiko, G.; Don, N.; Martyniuk, V.; Stepanchikov, D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The comparative analysis of the band structure and carrier kinematics for Zn₃As₂ and Cd₃As₂ has been executed. The influence of presence and absence of symmetry center in different crystalline phases of the above materials ...
  • Simulation of strain fields in GaSb/InAs heteroepitaxial system 
    Shutov, S.V.; Baganov, Ye.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Mechanical strains taking place in GaSb/InAs heterosystem in the presence of misfit dislocation network are investigated. Distributions of energy of strains and deformations in the system with misfit dislocation network ...
  • Modelling of micro- and nanodomain arrays recorded in ferroelectrics-semiconductors by using atomic force microscopy 
    Morozovska, A.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The thermodynamical theory of nanodomain tailoring in ferroelectrics-semiconductors allowing for semiconducting properties, screening and size effects is presented. The obtained analytical results prove that domains ...
  • Fabrication and characterization of a 0.14 μm CMOS device using ATHENA and ATLAS simulators 
    Ahmad, Ibrahim; Ho, Yeap Kim; Majlis, Burhanuddin Yeop (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    A 0.14 µm CMOS transistor with two levels of interconnection was designed and simulated to investigate its functionality and characteristics. ATHENA and ATLAS simulators were used to simulate the fabrication process and ...
  • Third order nonlinear optical response of PbS quantum dots 
    Chowdhury, S.; Hussain, A.M.P.; Ahmed, G.A.; Mohanta, D.; Choudhury, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    PbS quantum dots of the average size 10 nm are synthesized in the polymer matrix (PVA) following chemical route. Optical absorption spectra reveal a large blue shift from the bulk absorption cutoff wavelength. Instead of ...
  • Analysis of radiation patterns and feed illumination of the reflector antenna using the physical and geometrical optics 
    Merabtine, N.; Boualleg, A.; Benslama, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Reflector antennas are characterized by very high gains (30 dB and higher) and narrow main beams. They are widely used in satellite and line-of-sight microwave communications as well as in radar. Reflector antennas operate ...
  • Ge/Si heterojunction photodetector for 1.064 μm laser pulses 
    Ismail, Raid A.; Koshapa, Jospen; Abdulrazaq, Omar A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Iso- and anisotype heterojunction Ge/Si photodetectors were made by depositing Ge layer onto monocrystalline Si using a vacuum evaporation technique. These detectors before and after annealing were utilized to detect 1.064 ...
  • CdSe nanoparticles grown with different chelates 
    Bacherikov, Yu.Yu.; Davydenko, M.O.; Dmytruk, A.M.; Dmitruk, I.M.; Lytvyn, P.M.; Prokopenko, I.V.; Romanyuk, V.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Modified reverse micelles method allowing fabrication of CdSe nanoparticles in toluene solution in series of sizes with average diameter from 1.2 to 3.2 nm and size distribution ∼ 12-30 % is presented. Simple empirical ...
  • Synthesis and properties of semiconductor solid solutions (inSb)₁₋x(CdTe)x 
    Venger, E.F.; Knorozok, L.M.; Melnichuk, L.Yu.; Melnichuk, O.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider the growth technology and investigations of indium antimonide doped concurrently with acceptor (Сd) and donor (Те) impurities taken in equiatomic ratio. The optimal modes of single crystal synthesis and ...
  • Effect of weak magnetic field on structural arrangement of extrinsic oxygen atoms and mechanical properties of silicon monocrystals 
    Makara, V.A.; Steblenko, L.P.; Kolchenko, Yu.L.; Naumenko, S.M.; Lisovsky, I.P.; Mazunov, D.O.; Mokliak, Yu.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    IR spectroscopy study is indicative of the change in the relative concentration of interstitial oxygen in silicon monocrystals after their treatment by using the magnetic field. This is an evidence of a considerable effect ...
  • Mass-spectrometric investigations of gas evolution 
    Asnis, Yu.A.; Baranskii, P.I.; Babich, V.M.; Zabolotin, S.P.; Ptushinskii, Yu.G.; Sukretnyi, V.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Method of mass-spectrometry with time-of-flight recording of the desorbed products was used to study the gas evolution of impurities from the subsurface layer of Si crystals molten by the electron beam (of ~2 mm² area) in ...
  • Optical and photoelectrical properties of lamellar gallium sulfide single crystals irradiated by γ-quanta 
    Madatov, R.S.; Tagiyev, B.G.; Najafov, A.I.; Tagiyev, T.B.; Gabulov, I.A.; Shakili, Sh.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The influence of γ-quanta irradiation on photoelectrical and optical properties of lamellar GaS single crystals at different temperatures has been investigated. It is determined that the irradiation of pure crystals at the ...
  • Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe 
    Babentsov, V.N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    The defects in CdTe and CdSe nanocrystals were studied by comparing the photoluminescence spectra and cyclic voltammetry dependences, which enabled us to identify two main electron levels in CdTe and four in CdSe NCs. In ...
  • The first principle calculation of electronic and optical properties of AlN, GaN and InN compounds under hydrostatic pressure 
    Berrah, S.; Abid, H.; Boukortt, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Numerical simulation based on FPLAPW calculations is applied to study the lattice parameters, bulk modulus, band energy and optical properties of the zincblende binary solids AlN, GaN, InN under hydrostatic pressure. The ...

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