Dolgolenko, A.P.; Varentsov, M.D.; Gaidar, G.P.; Litovchenko, P.G.
(Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
We have studied the high-resistance samples of p-Si (р00 = (3.3 ± 0.5) ×
× 10¹² cm⁻³
) and n-Si (n₀ = (2.0 ± 0.3) × 10¹² cm⁻³
) grown by the floating-zone technique
after the irradiation by fast-pile neutrons at 287 ...