Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за назвою

Результати 87-89 з 89

X-ray diffraction study of deformation state in InGaN/GaN multilayered structures

Kladko, V.P.; Kuchuk, A.V.; Safryuk, N.V.; Machulin, V.F.; Belyaev, A.E.; Konakova, R.V.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)

High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice ...
Zero bias terahertz and subterahertz detector operating at room temperature

Momot, N.; Zabudsky, V.; Tsybrii, Z.; Apats’ka, M.; Smoliy, M.; Dmytruk, N. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)

In this paper, the experimental study of the terahertz and subterahertz hot electron bolometer based on narrow-gap semiconductor compound Hg₁₋xCdxTe is presented. The measurements were performed in the temperature range ...
Сhemiluminescent display

Jaguiro, P.; Stsiapanau, A.; Smirnov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)

Investigation of organic liquid phase electroluminescence (traditionally, the so-called “electro-chemiluminescence” or “electrogenerated chemiluminescence”) is of special interest as a competitor for “liquid” and “solid” ...

Результати 87-89 з 89

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