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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за назвою

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2010, том 13 за назвою

Сортувати за: Порядок: Результатів:

  • On the 60-year jubilee of Machulin Volodymyr Fedorovych Academician of NAS of Ukraine 
    Автор відсутній (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    23 April 2010 is the jubilee date in life of Academician of NAS of Ukraine Machulin Volodymyr Fedorovych: he has reached 60-year age.
  • Optical efficiency of Ag and Au nanoparticles 
    Dmitruk, N.L.; Malynych, S.Z.; Moroz, I.E.; Kurlyak, V.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    In this paper, we present the results of calculations aimed at the optical radiation efficiency of Ag and Au nanoparticles, which is defined by the ratio of the scattering cross-section to the extinction one. The ...
  • Optical properties and structure of As-Ge-Se thin films 
    Tolmachov, I.D.; Stronski, A.V.; Vlcek, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk ...
  • Optical properties of nematic liquid crystals doped with gold nanorods 
    Torgova, S.; Pozhidaev, E.; Lobanov, A.; Minchenko, M.; Khlebtsov, B. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Composites consisting of nematic liquid crystal (5-CB) and gold nanorods have been elaborated and investigated with a polarizing microscope. It was detected that the nanorods form inside the oriented liquid crystal matrix ...
  • Optical properties of thin films of titanium with transient layers on them 
    Lendel, V.V.; Lomakina, O.V.; Mel’nychenko, L.Yu.; Shaykevich, I.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Within the Beattie spectroellipsometric method, we measured the ellipsometric parameters of thin Ті films deposited onto glass substrates by magnetron sputtering in argon atmosphere. Measurements were carried out at five ...
  • Optical transmittance of carbon suspensions in polymer matrixes under powerful pulsed laser irradiation 
    Zelensky, S.E.; Kopyshinsky, O.V.; Garashchenko, V.V.; Kolesnik, A.S.; Stadnytskyi, V.M.; Zelenska, K.S.; Shynkarenko, Ye .V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The effect of optical limiting is investigated in the suspensions of carbon microparticles in aqueous gelatin gel and epoxy resin. Both transient and permanent changes of optical transmittance are observed after the ...
  • Peculiarities of the influence of high- and low-energy proton and electron irradiations on the characteristics of silicon solar cells 
    Chernenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Experimental data on degradation of photovoltaic and photoenergetic characteristics of silicon solar cells exposed by high-energy electrons and protons as well as low-energy protons have been obtained. The previously ...
  • Phase maps for networks of polycrystalline human biological liquids: Statistical and fractal analyses 
    Ushenko, Yu.O.; Istratiy, V.V.; Balanets’ka, V.O.; Kvasniyk, D.O.; Bachinsky, V.T.; Olar, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Performed in this work are complex statistical and fractal analyses of phase properties inherent to birefringence networks of liquid crystals consisting of opticallythin layers prepared from synovial fluid taken from ...
  • Photoaligned liquid-crystal lens with a single low-voltage electrode 
    Muravsky, A.A.; Agabekov, V.E.; Tolstik, A.L.; Mahilny, U.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    The simple design of liquid-crystal lenses with single electrode and operation voltage below 5 V is highly desired. We offer a new type of photoaligned liquid-crystal lens, where the refractive gradient is created by ...
  • Photoluminescent properties of crystalline solid solution Zn₁₋ xMgxSe:Cr²⁺, a new active material for tunable IR lasers 
    Kovalenko, N.O.; Zagoruiko, Yu.A.; Fedorenko, O.O.; Kuzminov, E.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Considered in this work are the luminescent properties of new active material Zn₁₋xMgxSe :Cr²⁺ for tunable IR lasers. Measured in Zn₀.₇₅Mg₀.₂₅Se : Cr²⁺ is the spectrum of IR luminescence excitation, and shown is the ...
  • Polarization-singular structure in laser images of phase-inhomogeneous layers to diagnose and classify their optical properties 
    Ushenko, Yu.O.; Misevich, I.Z.; Angelsky, A.P.; Bachinsky, V.T.; Telen’ga, O.Yu.; Olar, O.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Adduced in this work are the results of investigation aimed at analysis of coordinate distributions for azimuths and ellipticity of polarization (polarization maps) in laser images of three types of phase-inhomogeneous ...
  • Radiative recombination in initial and electron-irradiated GaP crystals 
    Hontaruk, O.; Konoreva, O.; Litovchenko, P.; Manzhara, V.; Opilat, V.; Pinkovska, M.; Tartachnyk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Photoluminescence of GaP crystals irradiated by 1 MeV electrons was studied at 4.2 K. Samples were prepared using various technologies and doped by Te, Zn, Mg and N. Emission spectra were analyzed as dependent on the ...
  • Raman scattering in sulphide glasses 
    Tolmachov, I.D.; Stronski, A.V.; Pribylova, H.; Vlček, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Raman spectra of two ternary glasses of composition Ge₅As₃₇S₅₈ and As₄Ge₃₀S₆₆ have been investigated. An influence of addition of third element on the spectra of binary glasses has been studied by comparison with spectra ...
  • Raman spectroscopy of the laser irradiated titanium dioxide 
    Strelchuk, V.V; Budzulyak, S.I.; Budzulyak, I.M; Ilnytsyy, R.V.; Kotsyubynskyy, V.O.; Segin, M.Ya.; Yablon, L.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Evolution of anatase phase for the TiO₂ nanocrystals at their laser irradiation is researched by the method of combinational light dispersion. The observed changes of intensity, frequency and halfwidth of TiO₂ phonon ...
  • Relaxation process features of photoconductivity in p-i-n structures 
    Mumimov, R.A.; Kanyazov, Sh.K.; Saymbetov, A.K. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    We studied the relaxation processes of photoconductivity in Si(Li) p-i-n structures. It has been shown that a clearly pronounced “well” is observed in time dependences of the photovoltage pulse after photoexcitation of ...
  • Scattering and birefringence properties of polymeric films modified with nanoparticles of different nature 
    Agabekov, V.E.; Ivanova, N.A.; Kosmacheva, T.G.; Dlugunovich, V.A.; Tsaruk, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Scattering properties of directed polyvinyl alcohol films modified with titanium dioxide or silver nanoparticles and illuminated by a 0.63 μm linear polarized He-Ne laser radiation were investigated. Ability of the ...
  • Self-organized nanostructured anodic oxides for display applications 
    Jaguiro, P.; Stsiapanau, A.; Hubarevich, A.; Mukha, Y.; Smirnov, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Electrochemical technologies have a high potential for display applications because of their cheapness and simplicity, easiness to scaling to large substrates and lowtemperature nature. However, in major display technologies ...
  • SERS of dye film deposited onto gold nano-clusters 
    Grytsenko, K.; Kolomzarov, Yu.; Lytvyn, O.; Doroshenko, T.; Strelchuk, V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Gold nanoclusters were obtained by co-deposition of and polytetrafluoroethylene (PTFE) in vacuum with various gold concentrations. The films deposited were undergone to heating at various temperatures in air. Transformation ...
  • Silicon carbide defects and luminescence centers in current heated 6H-SiC 
    Lee, S.W.; Vlaskina, S.I.; Vlaskin, V.I.; Zaharchenko, I.V.; Gubanov, V.A.; Mishinova, G.N.; Svechnikov, G.S.; Rodionov, V.E.; Podlasov, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    At room temperature yellow photoluminescence with a broad peak of 2.13 eV is a well-known feature of boron-doped 6H-SiC. Usually yellow luminescence is regarded as recombination involving both the boron-related deep ...
  • Smoothing cubic spline approximation of silicon diode temperature sensors thermometric characteristics 
    Ivashchenko, O.M.; Shwarts, Yu.M.; Shwarts, M.M.; Kopko, D.P.; Sypko, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Shown in this paper is the efficiency of a smoothing cubic spline approximation for temperature response curves (TRC) of wide range silicon diode thermometers (SDTs). The offered calculation algorithm allows to describe ...

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