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Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 4 за назвою

Репозиторій DSpace/Manakin

Перегляд Semicond. Physics Quantum Electronics & Optoelectronics, 2013, № 4 за назвою

Сортувати за: Порядок: Результатів:

  • Rubish, V.M.; Gera, E.V.; Durcot, M.O.; Pop, M.M.; Kostyukevich, S.O.; Kudryavtsev, A.A.; Mykulanynets-Meshko, O.S.; Rigan, M.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The optical transmissions spectra of amorphous Ge-S-Se films of chemical compositions (GeS₂)₅₀(GeSe₂)₅₀ and (GeS₃)₅₀(GeSe₃)₅₀, prepared by thermal evaporation, have been measured over the whole 400 to 800 nm spectral ...
  • Abdelhakim Mahdjoub; Lazhar Hadjeris (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    A photovoltaic cell, based on copper and indium selenide (CuInSe₂) thin layers, with a good efficiency can be achieved by simple, easy to implement and low cost techniques. The high refractive index materials used as ...
  • Kolomiets, I.S.; Savenkov, S.N.; Oberemok, Ye.A.; Klimov, A.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    In this paper, basing on the anisotropic properties of longitudinal inhomogeneous nondepolarizing media with linear phase anisotropy, more general type of media with elliptical phase anisotropy was studied. The features ...
  • Neimash, V.B.; Poroshin, V.M.; Shepeliavyi, P.Ye.; Yukhymchuk, V.O.; Melnyk, V.V.; Makara, M.A.; Kuzmich, A.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The influence of tin impurity on amorphous silicon crystallization was investigated using the methods of Raman scattering, Auger spectroscopy at ion etching, scanning electron microscopy and X-ray fluorescence microanalysis ...

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