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Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за автором "Slipokurov, V.S."

Репозиторій DSpace/Manakin

Перегляд Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18 за автором "Slipokurov, V.S."

Сортувати за: Порядок: Результатів:

  • Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors 
    Slipokurov, V.S.; Dub, M.M.; Tkachenko, A.K.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation ...
  • Methodological aspects of measuring the resistivity of contacts to high-resistance semiconductors 
    Slipokurov, V.S.; Dub, M.M.; Tkachenko, A.K.; Kudryk, Ya.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Proposed has been the method of formation a thermally stable ohmic contact to the diamond without high-temperature annealing with the resistivity ~50 to 80 Ohm∙cm² when Rs = 3∙10⁷ Ohm/ eing based on the analysis of correlation ...
  • Ohmic contacts based on Pd to indium phosphide Gunn diodes 
    Belyaev, A.E.; Boltovets, N.S.; Bobyl, A.V.; Zorenko, A.V.; Arsentiev, I.N.; Kladko, V.P.; Kovtonyuk, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact ...
  • Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP 
    Belyaev, A.E.; Boltovets, N.A.; Bobyl, A.B.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Nasyrov, M.U.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared ...

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