Ohmic contacts based on Pd to indium phosphide Gunn diodes

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2015, том 18
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Semicond. Physics Quantum Electronics & Optoelectronics, 2015, № 3
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Ohmic contacts based on Pd to indium phosphide Gunn diodes

Belyaev, A.E. ; Boltovets, N.S. ; Bobyl, A.V. ; Zorenko, A.V. ; Arsentiev, I.N. ; Kladko, V.P. ; Kovtonyuk, V.M. ; Konakova, R.V. ; Kudryk, Ya.Ya. ; Sachenko, A.V. ; Slipokurov, V.S. ; Slepova, A.S. ; Safryuk, N.V. ; Gudymenko, A.I. ; Shynkarenko, V.V.

Інший ID: DOI: 10.15407/spqeo18.03.317
PACS 73.40.Cg, 73.40.Ns, 85.30.Fg

URI: http://dspace.nbuv.gov.ua/handle/123456789/121208

Посилання: Ohmic contacts based on Pd to indium phosphide Gunn diodes / A.E. Belyaev, N.S. Boltovets, A.V. Bobyl, A.V. Zorenko, I.N. Arsentiev, V.P. Kladko, V.M. Kovtonyuk, R.V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2015. — Т. 18, № 3. — С. 317-323. — Бібліогр.: 34 назв. — англ.

Дата: 2015

Завантажень: 503

Ohmic contacts based on Pd to indium phosphide Gunn diodes

Анотація:

Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact resistance measured at room temperature was about 7·10⁻⁵ Ohm·cm². Voltage-current characteristics within the temperature range 110 to 380 K are linear. Gunn diodes with such contacts, which were made as a straight mesa-structure in a pulsed mode (pulse duration of 100 ns, pulse ratio of 1000, operating current of 2.2 A), generated the microwave power ~10 mW in the V-band.

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