Перегляд за автором "Zorenko, A.V."

Сортувати за: Порядок: Результатів:

  • A subharmonic mixer for the 220–325 GHz frequency range 
    Zorenko, A.V.; Kolesnik, N.V.; Kritskaya, T.V.; Kudryk, Ya.Ya.; Marunenko, Yu.V.; Ryzhanovich, L.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    We have made a subharmonic mixer (SHM) for the 220–325 GHz frequency range with conversion losses lower than 30 dB at the intermediate frequency 3 GHz. The subharmonic mixer design was based on a GaAs mixer Schottky ...
  • Development and investigation of microwave radiation sources and detector sections using SBDs within the 220–400 GHz frequency range 
    Zorenko, A.V.; Kudryk, Ya.Ya.; Marunenko, Yu.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    A procedure of mm- and submm-wave devices simulation based on the up-todate simulation techniques for bulk microwave structures is proposed. We demonstrate a possibility of making microwave radiation sources based on ...
  • Hybrid-integrated version of SBD amplitude detector intended for the 400–600 GHz frequency range 
    Zorenko, A.V.; Bychok, A.V.; Shynkarenko, V.V.; Kudryk, Ya.Ya.; Slipokurov, V.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    A finline version of detector with flat Schottky barrier diodes is developed. It is intended for operation in the 400600 GHz frequency range. The detector electrical parameters are studied. The detector conversion ratio ...
  • Ohmic contacts based on Pd to indium phosphide Gunn diodes 
    Belyaev, A.E.; Boltovets, N.S.; Bobyl, A.V.; Zorenko, A.V.; Arsentiev, I.N.; Kladko, V.P.; Kovtonyuk, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact ...