Перегляд за автором "Zaharim, A."

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  • Optimal solution in producing 32-nm CMOS technology transistor with desired leakage current 
    Elgomati, H.A.; Ahmad, I.; Salehuddin, F.; Hamid, F.A.; Zaharim, A.; Majlis, B.Y.; Apte, P.R. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2011)
    The objective of this paper is to optimize the process parameters of 32-nm CMOS process to get minimum leakage current. Four process parameters were chosen, namely: (i) source-drain implantation, (ii) source-drain ...