Перегляд за автором "Vlcek, M."

Сортувати за: Порядок: Результатів:

  • Stronski, A.V.; Vlcek, M.; Shepeliavyi, P.E.; Sklenar, A.; Kostyukevich, S.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The present paper is concerned with investigations of image formation properties of As₄₀S₂₀Se₄₀ thin layers. Spectral dependence of the refraction index, n, of variously treated (virgin, exposed, annealed) samples was ...
  • Tolmachov, I.D.; Stronski, A.V.; Vlcek, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Thin chalcogenide films with compositions As₁₀Ge₂₂.₅Se₆₇.₅ and As₁₂Ge₃₃Se₅₅ have been investigated. Optical constants and thicknesses of these films were obtained from transmission spectra. Structure of initial bulk ...
  • Stronski, A.; Vlcek, M.; Sklenar, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    The present paper is concerned with investigations of photoinduced structural changes in As100-xSx layers. Optical constants of variously treated (virgin, exposed, annealed) samples were determined from optical transmission ...
  • Stronski, A.V.; Vlcek, M.; Stetsun, A.I.; Sklenar, A.; Shepeliavyi, P.E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Raman spectra of the chalcogenide vitreous layers (As₄₀S₆₀, As₄₀S₄₀Se₂₀, As₄₀Se₆₀ ) non-doped and photodoped by Ag, Cu were measured. The spectra were analyzed in terms of a molecular model. It was ascertained, that for ...
  • Stronski, A.V.; Vlcek, M.; Kostyukevych, S.A.; Tomchuk, V.M.; Kostyukevych, E.V.; Svechnikov, S.V.; Kudryavtsev, A.A.; Moskalenko, N.L.; Koptyukh, A.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Thin vacuum-evaporated layers of As₄₀S₆₀-xSex composition are investigated using Raman spectroscopy from the viewpoint of thermo- and photostructural transformations in them. These transformations are considered as changes ...