Перегляд за автором "Vitusevich, S.A."

Сортувати за: Порядок: Результатів:

  • Current instabilities in resonant tunnelling diodes based on GaN/AlN heterojunctions 
    Belyaev, A.E.; Foxon, C.T.; Novikov, S.V.; Makarovsky, O.; Eaves, L.; Kappers, M.J.; Barnard, J.S.; Humphreys, C.J.; Danylyuk, S.V.; Vitusevich, S.A.; Naumov, A.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2004)
    Present paper studies double barrier resonant tunnelling diodes (DB-RTD) based on GaN/AlGaN heterostructures, grown by plasma-assisted molecular beam epitaxy (PA-MBE). Tunnel (current-voltage, I–V) and capacitance ...
  • Hemispherical and aspheric wgm dielectric resonators with conducting endplates: radiation and conductivity losses depending on shape of the resonators surface 
    Barannik, A.A.; Cherpak, N.T.; Kharchenko, M.S.; Vitusevich, S.A. (Радіофізика та електроніка, 2013)
    The aim of the work is to study the radiation and conductivity losses in whispering gallery mode (WGM) resonators of different shape of the body of rotation. In this work, electromagnetic properties of a number of WGM ...
  • Microwave properties of HTS films: measurements in millimeter wave range 
    Cherpak, N.T.; Barannik, A.A.; Prokopenko, Yu.V.; Filipov, Yu.F.; Vitusevich, S.A. (Физика низких температур, 2006)
    A theoretical and experimental justification of an approach proposed and developed by us for surface impedance standard measurements of HTS films is presented. An analysis of the electromagnetic properties of quasi-optical ...
  • Millimeter-wave study of London penetration depth temperature dependence in Ba(Fe₀.₉₂₆Co₀.₀₇₄)₂As₂ single crystal 
    Barannik, A.A.; Cherpak, N.T.; Ni, N.; Tanatar, M.A.; Vitusevich, S.A.; Skresanov, V.N.; Canfield, P.C.; Prozorov, R.; Glamazdin, V.V.; Torokhtii, K.I. (Физика низких температур, 2011)
    In-plane surface Ka-band microwave impedance of optimally doped single crystals of the Fe-based superconductor Ba(Fe₀.₉₂₆Co₀.₀₇₄)₂As₂ (Tc = 22.8 K) was measured. Sensitive sapphire disk quasi-optical resonator with high-Tc ...
  • Radiation hardness of AlAs/GaAs-based resonant tunneling diodes 
    Belyaev, A.A.; Belyaev, A.E.; Konakova, R.V.; Vitusevich, S.A.; Milenin, V.V.; Soloviev, E.A.; Kravchenko, L.N.; Figielski, T.; Wosinski, T.; Makosa, A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The total dose effects of ⁶⁰Co γ-radiation on the electrical properties of double-barrier Resonant Tunneling Diodes have been studied. The devices manifest enhanced radiation hardness and conserve their operating parameters ...
  • Ultra-high field transport in GaN-based heterostructures 
    Vitusevich, S.A.; Danylyuk, S.V.; Danilchenko, B.A.; Klein, N.; Zelenskyi, S.E.; Drok, E.; Avksentyev, A.Yu.; Sokolov, V.N.; Kochelap, V.A.; Belyaev, A.E.; Petrychuk, M.V.; Luth, H. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns ...