Перегляд за автором "Tkachuk, A.I."

Результати 1-7 з 7

Carrier transport mechanisms in reverse biased InSb p-n junctions

Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Carrier transport mechanisms have been investigated in linearly graded InSb p-n junctions prepared using thermal diffusion of Cd into single crystal substrates of ntype conductivity. The investigations were focused on the ...
Characterization of grain boundaries in CdTe polycrystalline films

Tetyorkin, V.V.; Sukach, A.V.; Boiko, V.A.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

CdTe polycrystalline films with the average size of grains within the range 10…360 μm were grown on sapphire substrates by using the modified close-spaced sublimation technique. Transverse (across the film) and lateral ...
Electrical properties of InSb p-n junctions prepared by diffusion methods

Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)

InSb p-n junctions were prepared by three diffusion methods, including isothermal, two-temperature and two-stage diffusion processes. The current-voltage characteristics were measured as a function of temperature and bias ...
Heterostructure ohmic contacts to p-CdTe polycrystalline films

Sukach, A.V.; Tetyorkin, V.V.; Tkachuk, A.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)

Heterostructure contacts p⁺ -PbTe/p-CdTe were prepared using the hot-wall technique on glassceramic substrates. It has been shown that the potential barrier at the p⁺ -PbTe/p-CdTe interface is not formed in the case ...
Injection current and infrared photosensitivity in isotype p-PbTe/p-CdTe heterojunctions

Tetyorkin, V.V.; Sukach, A.V.; Tkachuk, A.I.; Movchan, S.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)

Iso-type p-PbTe/p-CdTe heterojunctions were grown on BaF2 substrates by using the hot-wall epitaxy technique. The growth details are presented. The carrier transport mechanism was investigated by means of the current-voltage ...
Production and investigation of Cu/thin intermediate tunnel-transparent dielectric oxide layer/n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇/In Schottky barrier structures

Tkachuk, A.I.; Tsarenko, O.N.; Ryabets, S.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)

The high-planar epitaxial layers of n-Pb₀.₉₃₅Sn₀.₀₆₅Te₀.₂₄₃Se₀.₇₅₇ quaternary solid solutions, lattice matched with {111}BaF2 substrates, have been grown from bounded volume of supersaturated melt-solutions in the growth ...
Properties of the Pb₁-ₓSnₓTe₁-ᵧSeᵧ epitaxial layers grown from the supersaturated melt-solution on dielectric and semiconductor substrates

Tsarenko, O.N.; Ryabets, S.I.; Tkachuk, A.I. (Functional Materials, 2005)

The epitaxial layers of Pb₁-ₓSnₓTe₁-ᵧSeᵧ quaternary solid solution (thickness of 2 to 11 µm, Nd ≤ 10⁵ сm⁻², n(p) = (0.9 to 8.7)·10¹⁷ сm⁻³ and µₕ = (0.1 to 24)·10³ сm²·V⁻¹·s⁻¹ at T - 80 К), lattice-matched with KCI, BaF₂, ...

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Перегляд за автором "Tkachuk, A.I."

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