Перегляд за автором "Steblova, O.V."

Сортувати за: Порядок: Результатів:

  • Electron transport through nanocomposite SiO₂(Si) films containing Si nanocrystals 
    Bratus, O.L.; Evtukh, A.A.; Steblova, O.V.; Prokopchuk, V.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2016)
    The current transport through insulating SiO₂ films with silicon nanocrystals in Si/SiO₂(Si)/Al structures has been investigated in the wide range of temperatures (82…350 K). The nanocomposite SiO₂(Si) films containing the ...
  • Transformation of SiOx films into nanocomposite SiO₂(Si) films under thermal and laser annealing 
    Steblova, O.V.; Evtukh, A.A.; Bratus’, O.I.; Fedorenko, L.L.; Voitovych, M.V.; Lytvyn, O.S.; Gavrylyuk, O.O.; Semchuk, O.Yu. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2014)
    Oxide-assisted growth of Si nanocrystals includes deposition of a siliconenriched SiOx film at the first stage and annealing at the second one. The ion-plasma sputtering method has been used for deposition of the SiOx ...