Перегляд за автором "Safryuk, N.V."

Сортувати за: Порядок: Результатів:

  • Ohmic contacts based on Pd to indium phosphide Gunn diodes 
    Belyaev, A.E.; Boltovets, N.S.; Bobyl, A.V.; Zorenko, A.V.; Arsentiev, I.N.; Kladko, V.P.; Kovtonyuk, V.M.; Konakova, R.V.; Kudryk, Ya.Ya.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Experimental data on manufacturing the ohmic contacts Au–Ti–Pd–n⁺-InP, formed using vacuum deposition of metal onto a heated to 300 °C substrate representing an epitaxial n⁺-n-n⁺⁺-n⁺⁺⁺-InP structure. The specific contact ...
  • Structural and electrical-physical properties of the ohmic contacts based on palladium to n⁺ -n-n⁺⁺ -n⁺⁺⁺ -InP 
    Belyaev, A.E.; Boltovets, N.A.; Bobyl, A.B.; Kladko, V.P.; Konakova, R.V.; Kudryk, Ya.Ya.; Nasyrov, M.U.; Sachenko, A.V.; Slipokurov, V.S.; Slepova, A.S.; Safryuk, N.V.; Gudymenko, A.I.; Shynkarenko, V.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)
    Presented in this paper are experimental data on structural properties of contact metallization and temperature dependence of the specific contact resistance for ohmic contacts Au–Ti–Pd–n⁺-InP and Au–Ti–Ge–Pd-n⁺-InP prepared ...
  • X-ray diffraction study of deformation state in InGaN/GaN multilayered structures 
    Kladko, V.P.; Kuchuk, A.V.; Safryuk, N.V.; Machulin, V.F.; Belyaev, A.E.; Konakova, R.V.; Yavich, B.S. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    High resolution X-ray diffractometry (HRXRD) was used to investigate InxGa₁₋xN/GaN multilayered structures grown by the metal-organic chemical vapor deposition (MOCVD) method. Deformation conditions in the superlattice ...