Перегляд за автором "Melnichenko, M.M."

Сортувати за: Порядок: Результатів:

  • Photoelectrical properties of nanoporous silicon 
    Luchenko, A.I.; Svezhentsova, K.V.; Melnichenko, M.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    The optimal composition of etchant solution and etching time for chemical treatment to obtain nanoporous Si have been determined. Influence of nanocrystal dimensions on the electrophysical and photoelectrical properties ...
  • Structural properties, photoelectric and photoluminescent characteristics of nanostructured silicon 
    Luchenko, A.I.; Melnichenko, M.M.; Svezhentsova, K.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)
    . Nanostructured silicon layers (3–60 nm) have been formed upon substrates of monocrystalline silicon with a very large area (100 cm2 ), multicrystalline and metallurgical silicon by stain etching. We studied optical ...
  • Structure and luminescence study of nanoporous silicon layers with high internal surface 
    Makara, V.A.; Melnichenko, M.M.; Svezhentsova, K.V.; Khomenkova, L.Yu.; Shmyryeva, O.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    In this work, the technique of formation of homogeneous nanoporous silicon layers with high internal surface on solar cell substrates by stain etching is developed. Emission and structure properties of such layers were ...
  • Study of nanostructured layers of single-crystal silicon by scanning tunnel spectroscopy 
    Kulyk, S.P.; Melnichenko, M.M.; Svezhentsova, K.V.; Shmyryova, O.M. (Functional Materials, 2008)
    The nanostructured silicon surface has been studied using the scanning tunnel microscopy and spectroscopy in air. The local density of electron states was defined as normalized differential tunnel conductivity (dI/dU)(I/U). ...