Перегляд за автором "Matveeva, L.A."

Результати 1-9 з 9

Analysis of the fundamental absorption edge of the films obtained from the C₆₀ fullerene molecular beam in vacuum and effect of internal mechanical stresses on it

Kolyadina, E.Yu.; Matveeva, L.A.; Neluba, P.L.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2015)

Nanostructures with fullerene C₆₀ were obtained using vacuum sublimation thermal C₆₀ fullerene powder onto unheated substrates made of silicon, mica, silica and coverslip glass. The effect of the structure, composition and ...
Effects of interband phototunneling and filling the bands in electroreflectance spectra of germanium

Gentsar, P.A.; Matveeva, L.A.; Kudryavtsev, A.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

Electroreflectance spectra of chemically etched (110) surface of intrinsic germanium are measured in the range of E₁, E₁ + Δ₁ transitions for ||[100] and ||[10] directions of the polarization vector. Separated are isotropic ...
Electron beam application for mechanical stress relaxation and for SI-SIO₂ interface structural regulation

Matveeva, L.A.; Vanger, E.F.; Holiney, R.Yu. (Вопросы атомной науки и техники, 1999)

In this work is shown that: (i) The energies of critical points in the zone diagram of the silicon substrate change under the radiationstimulation relaxation of IMS that was shown by the shifting the electroreflectance ...
Electroreflectance spectroscopy and scanning electron microscopy study of microrelief silicon wafers with various surface pretreatments

Gorbach, T.Ya.; Holiney, R.Yu.; Matiyuk, I.M.; Matveeva, L.A.; Svechnikov, S.V.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1998)

The effect of various pretreatments on the performance of microrelief (textured) Si wafers was studied by the techniques of low-field electroreflectance spectroscopy, scanning electron microscopy, and electron diffraction. ...
Influence of neutron irradiation on elctrooptical and structural properties of silicon

Groza, A.A.; Venger, E.F.; Varnina, V.I.; Holiney, R.Yu.; Litovchenko, P.G.; Matveeva, L.A.; Litovchenko, A.P.; Sugakov, V.I.; Shmatko, G.G. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)

Processes of structure defects formation, which accompanied by oxygen precipitation after a neutron irradiation (10¹⁵- 10¹⁹ n/cm²) and high-temperature treatment (800 - 1000°С) in CZ silicon, were investigated by the ...
Investigation of the undersurface damaged layers in silicon wafers

Holiney, R.Yu.; Matveeva, L.A.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)

The undersurface damaged layers of the silicon wafers were studied by electroreflectance method. These damaged layers could be created at cutting or standard treatment (ST) of the silicon wafers. The silicon substrates ...
Ordering of lateral nonuniformity of TiBx film and transition layer in the TiBx-GaAs system

Konakova, R.V.; Milenin, V.V.; Voitsikhovskyi, D.I.; Kamalov, A.B.; Kolyadina, E.Yu.; Lytvyn, P.M.; Lytvyn, O.S.; Matveeva, L.A.; Prokopenko, I.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)

For TiBx film ~50 nm thick formed by magnetron sputtering from a pressed target onto the <100> GaAs substrate we experimentally revealed lateral nonuniformity ordering at microwave irradiation (frequency of 2.45 GHz, ...
Potentiality of the composite fulleren based carbon films as the stripper foils for tandem accelerators

Vasin, A.V.; Matveeva, L.A.; Kozeratskaya, G.N.; Rusavsky, A.V.; Totsky, Yu.I.; Vishnevsky, I.N. (Вопросы атомной науки и техники, 2001)

The problem of the radiation resistance of the carbon stripper foils is considered. The short review of the experimental data available in literature and original experimental results of the authors are presented. In the ...
The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment

Kolyadina, E.Yu.; Konakova, R.V.; Matveeva, L.A.; Mitin, V.F.; Shynkarenko, V.V.; Atanassova, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)

The effect of short-term microwave treatment (MT) on the electronic properties of interface in the Ta₂O₅−SiOx−p-Si structures has been investigated. The samples of two types were studied: check ones (batch I) and those ...

Результати 1-9 з 9

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Перегляд за автором "Matveeva, L.A."

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