Перегляд за автором "Lisitsa, M.P."

Сортувати за: Порядок: Результатів:

  • Enhancement of CdSSe QD exciton luminescence efficiency by hydrogen RF plasma treatment 
    Kunets, V.P.; Kulish, N.R.; Strelchuk, V.V.; Nazarov, A.N.; Tkachenko, A.S.; Lysenko, V.S.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    We report an enhancement of exciton luminescence in CdSxSe₁₋x QD embedded into borosilicate glass matrix and then treated by the low-temperature hydrogen RF plasma. Results clearly confirm the essential crushing of the ...
  • InAs quantum dots embedded into anti-modulation-doped GaAs superlattice structures 
    Masselink, W.T.; Kissel, H.; Mueller, U.; Walther, C.; Mazur, Yu.I.; Tarasov, G.G.; Lisitsa, M.P.; Lavoric, S.R.; Zhuchenko, Z.Ya. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    Photoluminescence (PL) spectra of anti-modulation-doped GaAs superlattice structures containing thin InAs films of about 1-2.5 monolayers grown on semi-insulating (001)-oriented GaAs substrates at different temperatures ...
  • Influence of polarization azimuth on twophoton absorption in CdS 
    Kulish, N.R.; Lisitsa, M.P.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    To study the dependence of the two-photon absorption coefficient β on a polarization azimuth ϕ we used the method of one light source at the ruby laser frequency. It was shown that β changes smoothly with increasing ϕ ...
  • Investigation of light polarization in CdS in the presence of two-photon absorption 
    Kulish, M.R.; Lisitsa, M.P.; Malysh, N.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2007)
    It is shown that, under the two-photon absorption in CdS, the increase in the azimuth of polarization causes a smooth change of the large semi-axis angle rotation, ellipticity, focal parameter, and eccentricity of the ...
  • Mechanism of photoinduced luminescence degradation in CdSxSe₁₋x quantum dots 
    Kunets, V.P.; Kulish, N.R.; Lisitsa, M.P.; Bryksa, V.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    A possible mechanism of the photoinduced luminescence degradation in the hexagonal CdSxSe₁₋x quantum dots synthesized in a glass matrix is discussed using luminescence decay kinetic investigations and ab initio calculations ...
  • Optical size effects in thin gold films 
    Kovalenko, S.A.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    The optical size effects that appear in thickness dependencies of refraction (n) and absorption (k) indexes, Brewster's quasiangle and dielectric constant e2 in thin gold films are discussed. All of them have oscillating ...
  • Saddle point excitonic resonances in BiI3 layered single crystals 
    Kudryavtsev, O.O.; Lisitsa, M.P.; Motsnyi, F.V.; Virko, S.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    Excitonic resonances near the critical saddle point of M₁ sort by van Hove have been revealed for the first time in the BiI₃ layered semiconductor. Their main parameters are estimated.
  • Thickness dependences of optical constants for thin layers of some metals and semiconductors 
    Kovalenko, S.A.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2001)
    The review comprises investigations devoted to determination of refractive index and absorption coefficient dependences on thickness for thin films of metals and atomic semiconductors. It has been shown that erroneous ...
  • Urbach’s rule peculiarities in structures with CdSxSe₁₋x nanocrystals 
    Kunets, V.P.; Kulish, N.R.; Kunets, Vas.P.; Lisitsa, M.P. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    We have found that the long wavelength fundamental absorption edge of CdSXSe₁-x nanocrystals grown in an oxide glass follows to the generalized Urbach rule that takes into account both the dynamic (phonon induced) and ...