Перегляд за автором "Kolomoets, V.V."

Результати 1-4 з 4

Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

Ermakov, V.M.; Kolomoets, V.V.; Panasyuk, L.I.; Nazarchuk, P.F.; Yashchynskiy, L.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2012)

The change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the ...
Interface model of low temperature plasticity in high uniaxially strained monocrystalline semiconductors

Venger, Ye.F.; Kolomoets, V.V.; Machulin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)

The manifestation of the low temperature plasticity (LTP) in highly uniaxially strained Ge and Si single crystals was deduced from analysis of the both tensoeffect measurements data and defect-selective etching patterns ...
Investigations of physical mechanisms of metal-insulator transition in highly strained n-Si and n-Ge crystals

Budzulyak, S.I.; Ermakov, V.M.; Kyjak, B.R.; Kolomoets, V.V.; Machulin, V.F.; Novoselets, M.K.; Panasjuk, L.I.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

Analysis of experimental results on transport phenomena is presented for highly uniaxially strained silicon and germanium crystals heavily doped by shallow donors. Possible mechanisms of the strain induced metal-insulator ...
Thermodonor activation energy and mechanisms of tensoeffects in transmutation-doped y-irradiated silicon

Dotsenko, Yu.P.; Ermakov, V.M.; Gorin, A.E.; Khivrych, V.I.; Kolomoets, V.V.; Machulin, V.F.; Panasjuk, L.I.; Prokopenko, I.V.; Sus', B.B.; Venger, E.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)

Activation energy of high temperature technological thermodonors (TD) has been determined in transmutation-doped n-Si(P) using the data analysis of the Hall-effect temperature dependence. Physical mechanisms of tensoeffects ...

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Перегляд за автором "Kolomoets, V.V."

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Перегляд за автором "Kolomoets, V.V."

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