Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

Домашня сторінка
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Фізико-технічні та математичні науки
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Відділення фізики і астрономії
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Semiconductor Physics Quantum Electronics & Optoelectronics
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Semiconductor Physics Quantum Electronics & Optoelectronics, 2012, том 15
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Semicond. Physics Quantum Electronics & Optoelectronics, 2012, № 1
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Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

Ermakov, V.M. ; Kolomoets, V.V. ; Panasyuk, L.I. ; Nazarchuk, P.F. ; Yashchynskiy, L.V.

Інший ID: PACS 72.20.Dp

URI: http://dspace.nbuv.gov.ua/handle/123456789/118279

Посилання: Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K / V.M. Ermakov, V.V. Kolomoets, L.I. Panasyuk , P.F Nazarchuk, L.V. Yashchynskyi // Semiconductor Physics Quantum Electronics & Optoelectronics. — 2012. — Т. 15, № 1. — С. 77-79. — Бібліогр.: 3 назв. — англ.

Дата: 2012

Завантажень: 476

Contribution of f- and g- transitions to electron intervalley scattering of n-S at temperatures 300 to 450 K

Анотація:

The change in mobility with increasing the temperature which may be due to the inclusion of gLO-phonon energy of 720K, is presented. In orientation of the uniaxial pressure X//[110]//J, g-transitions are attached in the directions [100] and [010]. The ftransitions are not completely removed from valleys located in the plane (100). In this case, there is no change in the slope of the dependence logρ vs. logT for the temperature range 300 to 450 K. So, no contribution of g-transitions to intervalley scattering occurs, while the observed is tha decisive role of f–transitions to this scattering.

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