Перегляд за автором "Gorley, P.M."

Сортувати за: Порядок: Результатів:

  • Current flow mechanisms in p-i-n­ structures based on cadmium telluride 
    Gorley, P.M.; Demych, M.V.; Makhniy, V.P.; Horvath, Zs.J.; Shenderovsky, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2002)
    Electrical properties of p-i-n-structures obtained with low-temperature oxygen and lithium diffusion into low-resistive n-CdTe substrates have been investigated. The role of generation-recombination processes as well as ...
  • Diffusion model of defect formation in silicon under light ion implantation 
    Voznyy, M.V.; Gorley, P.M.; Schenderovskyy, V.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    In the given paper the model of defect formation in silicon under light ion implantation is proposed which describes the whole complex of available experimental results qualitatively, and in a number of cases rather well ...
  • Direct current transport mechanisms in n-InSe/p-CdTe heterostructure 
    Gorley, P.M.; Prokopenko, I.V.; Grushka, Z.M.; Makhniy, V.P.; Grushka, O.G.; Chervinsky, O.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The authors created n-InSe/p-CdTe heterojunction by deposition over optical contact, investigated temperature evolution of its current-voltage dependences under the forward bias, and determined the prevailing current ...
  • Electrical properties of n-SnS₂/n-CdIn₂Te₄ heterostructure 
    Gorley, P.M.; Grushka, Z.M.; Grushka, O.G.; Gorley, P.P.; Zabolotsky, I.I. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2010)
    Using the method of deposition over the optical contact, the authors created nSnS2/n-CdIn₂Te₄ heterojunction and investigated temperature evolution of its currentvoltage characteristics under the forward bias U ≤ 3 V. ...
  • Electric field and carrier concentration distributions in the semiconductor under photorefractive Gunn effect 
    Gorley, P.M.; Horley, P.P.; Chupyra, S.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    In the framework of the one-dimension field model of semiconductor simultaneosly subjected to the action of carrier-warming electric field and two quasi-monochromatic light waves the authors have numerically calculated the ...
  • Self-organization in semiconductors with drift instability under influence of modulated light. II. Light response to external field variations 
    Chupyra, S.M.; Horley, P.P.; Gorley, P.M. (Functional Materials, 2005)
    The spectral dependence of photo-response for a finite size semiconductor under Gunn effect has been theoretically studied. А correlation has been established between the voltage variations across a sample and current and ...