Перегляд за автором "Fodchuk, I.M."

Сортувати за: Порядок: Результатів:

  • Character of elastic energy absorption in well developed genetic-impurity defect structure in monocrystalline silicon 
    Gutsulyak, B.I.; Oliynych-Lysyuk, A.V.; Fodchuk, I.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2005)
    Low-frequency internal friction and dynamic shear modulus (Geff) in Si monocrystal were investigated in the range of 20 to 200 ºC. Temperature hysteresis of internal friction was found and effective shear modulus was studied ...
  • Determination of surface parameters of solids by methods of X-ray total external reflection 
    Balovsyak, S.V.; Fodchuk, I.M.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The series of GaAs and SiO₂ samples with the specially prepared one- and two-dimensional surface reliefs have been investigated by the methods of integral and differential curve total external reflection of X-rays. The ...
  • Dynamical Theory of Triple-Crystal X-ray Diffractometry and Characterization of Microdefects and Strains in Imperfect Single Crystals 
    Molodkin, V.B.; Olikhovskii, S.I.; Len, E.G.; Kyslovskyy, Ye.M.; Reshetnyk, O.V.; Vladimirova, T.P.; Sheludchenko, B.V.; Skakunova, E.S.; Lizunov, V.V.; Kochelab, E.V.; Fodchuk, I.M.; Klad’ko, V.P. (Металлофизика и новейшие технологии, 2016)
    A short review of basic principles and limitations in obtaining the analytical expressions for the coherent and diffuse scattering intensities measured by the triple-crystal diffractometer (TCD) are presented. Explicit ...
  • Evolution of defective structure of the irradiated silicon during natural ageing 
    Fodchuk, I.M.; Gutsulyak, T.G.; Himchynsky, O.G.; Olijnich-Lysjuk, A.V.; Raransky, N.D. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The defective structure of silicon single crystals grown by Chochralski method (Cz-Si) before and after an irradiation by high-energy electrons and gamma beams (E ~ 18 MeV) have been studied by the X-rey acoustic resonance ...
  • Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions 
    Fodchuk, I.M.; Gutsuliak, I.I.; Zaplitniy, R.A.; Balovsyak, S.V.; Yaremiy, I.P.; Bonchyk, O.Yu.; Savitskiy, G.V.; Syvorotka, I.M.; Lytvyn, P.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2013)
    The scattering field gradient maps of surface layer magnetic domains in Y₂.₉₅La₀.₀₅Fe₅O₁₂ iron-yttrium garnet modified by high-dose ion implantation with nitrogen ions N+ were obtained by the method of magnetic force ...
  • Solid state doping of CdxHg₁₋xTe epitaxial layers with elements of V group 
    Vlasov, A.P.; Bonchyk, A.Yu.; Fodchuk, I.M.; Barcz, A.; Swiatek, Z.T.; Zaplitnyy, R.A. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    Presented here are the results of studying the controlled doping with elements of V group of the periodic table, arsenic As and antimony Sb, of narrow gap CdxHg₁₋xTe epitaxial layers during the isothermal growth from the ...
  • Structural changes in multilayer systems containing InxGa₁₋xAs₁₋yNy quantum wells 
    Fodchuk, I.M.; Gevyk, V.B.; Gimchinsky, O.G.; Kislovskii, E.N.; Kroytor, O.P.; Molodkin, V.B.; Olihovskii, S.I.; Pavelescu, E.M.; Pessa, M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2003)
    The investigations of multilayer nano-scale systems contained one or two quantum wells are carried out by double-crystal X-ray diffractometry. Processes of interdiffusion of In, Ga atoms and their influence on properties ...